An Evaluation of Silicon Carbide Unipolar Technologies for Electric Vehicle Drive-Trains

S. Jahdi, Olayiwola Alatise, C. A. Fisher, L. Ran, Philip A. Mawby

Research output: Contribution to journalArticle (Academic Journal)

Original languageEnglish
Pages (from-to)517-528
Number of pages12
JournalIEEE Journal of Emerging and Selected Topics in Power Electronics
Volume2
Issue number3
DOIs
Publication statusPublished - 1 Sep 2014

Keywords

  • PWM power convertors
  • Schottky diodes
  • electric machines
  • electric vehicles
  • electromagnetic oscillations
  • field effect transistor switches
  • harmonic distortion
  • insulated gate bipolar transistors
  • losses
  • p-i-n diodes
  • silicon compounds
  • EV drive-trains
  • IGBT
  • MOSFET-Schottky diodes
  • SiC
  • VSC
  • compact vehicle systems
  • comparative analysis
  • conversion efficiency enhancement
  • device switching performance
  • electric machine
  • electric vehicle drive-trains
  • energy conversion efficiency
  • gate resistances
  • lighter cooling
  • p-i-n diode
  • power integration
  • reverse recovery
  • silicon carbide unipolar technology
  • silicon insulated gate bipolar transistors
  • switching frequency
  • switching losses reduction
  • temperature -75 degC to 175 degC
  • temperature performance
  • three-level neutral point clamped VSC
  • total harmonic distortion
  • voltage 1.2 kV
  • voltage sourced converters
  • Insulated gate bipolar transistors
  • Logic gates
  • MOSFET
  • Silicon
  • Silicon carbide
  • Switches
  • Temperature measurement
  • Electric Vehicles
  • Electric vehicles (EVs)
  • Power Semiconductor Devices, Silicon Carbide
  • Pulse Width Modulation Converters
  • Switching Circuits
  • power semiconductor devices
  • pulsewidth modulation (PWM) converters
  • silicon carbide
  • switching circuits

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