An improved band-anticrossing model - including the positional dependence of nitrogen - for InGaNAs/GaAs quantum well lasers

Y Qiu, JM Rorison

Research output: Contribution to journalArticle (Academic Journal)

17 Citations (Scopus)

Abstract

The positional dependence of the localized nitrogen (N) within the quantum well is included with the band-anti-crossing model that describes the interaction of the GaInAs conduction band with the localized N defect. It is found that N located at the center of the well interacts more strongly with the InGaAs conduction band than N localized near the edge of the quantum well. Different distributions of N are investigated by studying the conduction band edge shift, energy level splitting, dipole moments, and gain. These quantities are found to be highly dependent upon the position of the N.
Translated title of the contributionAn improved band-anticrossing model - including the positional dependence of nitrogen - for InGaNAs/GaAs quantum well lasers
Original languageEnglish
Pages (from-to)1 - 3
Number of pages3
JournalApplied Physics Letters
Volume87 (8, 081111)
DOIs
Publication statusPublished - Aug 2005

Bibliographical note

Publisher: American Institute of Physics

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