The positional dependence of the localized nitrogen (N) within the quantum well is included with the band-anti-crossing model that describes the interaction of the GaInAs conduction band with the localized N defect. It is found that N located at the center of the well interacts more strongly with the InGaAs conduction band than N localized near the edge of the quantum well. Different distributions of N are investigated by studying the conduction band edge shift, energy level splitting, dipole moments, and gain. These quantities are found to be highly dependent upon the position of the N.
|Translated title of the contribution||An improved band-anticrossing model - including the positional dependence of nitrogen - for InGaNAs/GaAs quantum well lasers|
|Pages (from-to)||1 - 3|
|Number of pages||3|
|Journal||Applied Physics Letters|
|Volume||87 (8, 081111)|
|Publication status||Published - Aug 2005|