An Optical Content Addressable Memory Cell for Address Look-Up at 10 Gb/s

Stelios Pitris, Christos Vagionas, Pavlos Maniotis, George T. Kanellos, Nikos Pleros

Research output: Contribution to journalArticle (Academic Journal)peer-review

15 Citations (Scopus)
211 Downloads (Pure)

Abstract

We propose and experimentally demonstrate the first all-optical content addressable memory (CAM) cell that comprises an all-optical monolithically integrated InP flip-flop and an optical XOR gate. The experimental results reveal error-free operation at 10 Gb/s for both content addressing and content writing operations. The potential of these memory architectures to allow for up to 40-Gb/s operation could presumably lead to fast CAM-based routing applications by enabling all-optical address look-up schemes.

Original languageEnglish
Article number7478034
Pages (from-to)1790-1793
Number of pages4
JournalIEEE Photonics Technology Letters
Volume28
Issue number16
DOIs
Publication statusPublished - 15 Aug 2016

Keywords

  • Content Addressable Memories
  • InP monolithic integration
  • Optical Look-up
  • Optical Memories
  • Photonic integrated circuits Semiconductor Optical Amplifiers

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