The design and measurements of a fabricated novel digitally programmable wideband power amplifier (PA) are presented. The PA is made suitable for use in all communication standards, including GSM, 3G, LTE and Femto-cells, offering a bandwidth of several octaves covering presently 300MHz to 3.5GHz. It meets power, efficiency and linearity specifications. The amplifier showed excellent performances. The uniquely linear and high power SONY GaAs J-PHEMT process along with novel output-stage multiple cascode topology structure are discussed. This enabled a distinctive larger output impedance and power and low voltage operation. The output stage offered 15-20dB of gain without a driver. The circuit requires only little output or input matching for gain or impedance, depending on the application. In order to obtain higher gain and optimal application specific performance, a driver stage was added on the same die. A digitally programmable tuning chip was incorporated to the solution to optimize the performance for large bandwidths exceeding 40%. For smaller bandwidths no digital tuning was required. Digital pre-distortion algorithm was tested for better linearization. To the best knowledge of the authors, this is the first comprehensive plug-and-play solution for multi-band and multi-mode handset transmitters with the single chip one PA.
|Number of pages||13|
|Journal||IEEE Transactions on Circuits and Systems - I: Regular Papers|
|Early online date||18 Aug 2016|
|Publication status||Published - Oct 2016|
- Mobile Terminal
- Power Amplifier
- Digital Predistortion