Analysis of cyclic spontaneous switchings in GaN & SiC cascodes by snappy turn-off currents

Yasin Gunaydin; Saeed Jahdi; Olayiwola Alatise; Jose Angel Ortiz Gonzalez; Avinash Aithal; Xibo Yuan; Phil H Mellor

doi:10.1016/j.microrel.2020.113752

Analysis of cyclic spontaneous switchings in GaN & SiC cascodes by snappy turn-off currents

Yasin Gunaydin, Saeed Jahdi^*, Olayiwola Alatise, Jose Angel Ortiz Gonzalez, Avinash Aithal, Xibo Yuan, Phil H Mellor

^*Corresponding author for this work

Research output: Contribution to journal › Article (Academic Journal) › peer-review

Abstract

This paper investigates the crosstalk-induced spontaneous switchings as continuous cycles of turn-on and turn-off transients as a key reliability criterion in SiC and GaN cascode power devices. The paper presents a wide range of measurements to describe the severity of unwanted switching cycles in presence of a few diodes with high turn-off dI/dt which results in a negative gate voltage induced by the source inductance. Modelling is performed which confirms the theory described to explain the root cause of the continued oscillatory transients and comparisons are made with standalone SiC power MOSFETs.

Original language	English
Article number	113752
Number of pages	7
Journal	Microelectronics Reliability
Volume	114
Issue number	November 2020
DOIs	https://doi.org/10.1016/j.microrel.2020.113752
Publication status	Published - 1 Nov 2020

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title = "Analysis of cyclic spontaneous switchings in GaN & SiC cascodes by snappy turn-off currents",

abstract = "This paper investigates the crosstalk-induced spontaneous switchings as continuous cycles of turn-on and turn-off transients as a key reliability criterion in SiC and GaN cascode power devices. The paper presents a wide range of measurements to describe the severity of unwanted switching cycles in presence of a few diodes with high turn-off dI/dt which results in a negative gate voltage induced by the source inductance. Modelling is performed which confirms the theory described to explain the root cause of the continued oscillatory transients and comparisons are made with standalone SiC power MOSFETs.",

author = "Yasin Gunaydin and Saeed Jahdi and Olayiwola Alatise and {Ortiz Gonzalez}, {Jose Angel} and Avinash Aithal and Xibo Yuan and Mellor, {Phil H}",

year = "2020",

month = nov,

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doi = "10.1016/j.microrel.2020.113752",

language = "English",

volume = "114",

journal = "Microelectronics Reliability",

issn = "0026-2714",

publisher = "Elsevier",

number = "November 2020",

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Analysis of cyclic spontaneous switchings in GaN & SiC cascodes by snappy turn-off currents. / Gunaydin, Yasin ; Jahdi, Saeed; Alatise, Olayiwola; Ortiz Gonzalez, Jose Angel; Aithal, Avinash; Yuan, Xibo ; Mellor, Phil H.

In: Microelectronics Reliability, Vol. 114, No. November 2020, 113752, 01.11.2020.

Research output: Contribution to journal › Article (Academic Journal) › peer-review

TY - JOUR

T1 - Analysis of cyclic spontaneous switchings in GaN & SiC cascodes by snappy turn-off currents

AU - Gunaydin, Yasin

AU - Jahdi, Saeed

AU - Alatise, Olayiwola

AU - Ortiz Gonzalez, Jose Angel

AU - Aithal, Avinash

AU - Yuan, Xibo

AU - Mellor, Phil H

PY - 2020/11/1

Y1 - 2020/11/1

N2 - This paper investigates the crosstalk-induced spontaneous switchings as continuous cycles of turn-on and turn-off transients as a key reliability criterion in SiC and GaN cascode power devices. The paper presents a wide range of measurements to describe the severity of unwanted switching cycles in presence of a few diodes with high turn-off dI/dt which results in a negative gate voltage induced by the source inductance. Modelling is performed which confirms the theory described to explain the root cause of the continued oscillatory transients and comparisons are made with standalone SiC power MOSFETs.

AB - This paper investigates the crosstalk-induced spontaneous switchings as continuous cycles of turn-on and turn-off transients as a key reliability criterion in SiC and GaN cascode power devices. The paper presents a wide range of measurements to describe the severity of unwanted switching cycles in presence of a few diodes with high turn-off dI/dt which results in a negative gate voltage induced by the source inductance. Modelling is performed which confirms the theory described to explain the root cause of the continued oscillatory transients and comparisons are made with standalone SiC power MOSFETs.

U2 - 10.1016/j.microrel.2020.113752

DO - 10.1016/j.microrel.2020.113752

M3 - Article (Academic Journal)

VL - 114

JO - Microelectronics Reliability

JF - Microelectronics Reliability

SN - 0026-2714

IS - November 2020

M1 - 113752

ER -

Analysis of cyclic spontaneous switchings in GaN & SiC cascodes by snappy turn-off currents

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