Analysis of cyclic spontaneous switchings in GaN & SiC cascodes by snappy turn-off currents

Yasin Gunaydin; Saeed Jahdi; Olayiwola Alatise; Jose Angel Ortiz Gonzalez; Avinash Aithal; Xibo Yuan; Phil H Mellor

doi:10.1016/j.microrel.2020.113752

Analysis of cyclic spontaneous switchings in GaN & SiC cascodes by snappy turn-off currents

Yasin Gunaydin, Saeed Jahdi^*, Olayiwola Alatise, Jose Angel Ortiz Gonzalez, Avinash Aithal, Xibo Yuan, Phil H Mellor

^*Corresponding author for this work

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Abstract

This paper investigates the crosstalk-induced spontaneous switchings as continuous cycles of turn-on and turn-off transients as a key reliability criterion in SiC and GaN cascode power devices. The paper presents a wide range of measurements to describe the severity of unwanted switching cycles in presence of a few diodes with high turn-off dI/dt which results in a negative gate voltage induced by the source inductance. Modelling is performed which confirms the theory described to explain the root cause of the continued oscillatory transients and comparisons are made with standalone SiC power MOSFETs.

Original language	English
Article number	113752
Number of pages	7
Journal	Microelectronics Reliability
Volume	114
Issue number	November 2020
DOIs	https://doi.org/10.1016/j.microrel.2020.113752
Publication status	Published - 1 Nov 2020

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Analysis of Performance and Reliability of Sub-kV SiC and GaN Cascode Power Electronic Devices
Gunaydin, Y. (Author), Jahdi, S. (Supervisor) & Yuan, X. (Supervisor), 3 Oct 2023
Student thesis: Doctoral Thesis › Doctor of Philosophy (PhD)

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title = "Analysis of cyclic spontaneous switchings in GaN \& SiC cascodes by snappy turn-off currents",

abstract = "This paper investigates the crosstalk-induced spontaneous switchings as continuous cycles of turn-on and turn-off transients as a key reliability criterion in SiC and GaN cascode power devices. The paper presents a wide range of measurements to describe the severity of unwanted switching cycles in presence of a few diodes with high turn-off dI/dt which results in a negative gate voltage induced by the source inductance. Modelling is performed which confirms the theory described to explain the root cause of the continued oscillatory transients and comparisons are made with standalone SiC power MOSFETs.",

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doi = "10.1016/j.microrel.2020.113752",

language = "English",

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T1 - Analysis of cyclic spontaneous switchings in GaN & SiC cascodes by snappy turn-off currents

AU - Gunaydin, Yasin

AU - Jahdi, Saeed

AU - Alatise, Olayiwola

AU - Ortiz Gonzalez, Jose Angel

AU - Aithal, Avinash

AU - Yuan, Xibo

AU - Mellor, Phil H

PY - 2020/11/1

Y1 - 2020/11/1

N2 - This paper investigates the crosstalk-induced spontaneous switchings as continuous cycles of turn-on and turn-off transients as a key reliability criterion in SiC and GaN cascode power devices. The paper presents a wide range of measurements to describe the severity of unwanted switching cycles in presence of a few diodes with high turn-off dI/dt which results in a negative gate voltage induced by the source inductance. Modelling is performed which confirms the theory described to explain the root cause of the continued oscillatory transients and comparisons are made with standalone SiC power MOSFETs.

AB - This paper investigates the crosstalk-induced spontaneous switchings as continuous cycles of turn-on and turn-off transients as a key reliability criterion in SiC and GaN cascode power devices. The paper presents a wide range of measurements to describe the severity of unwanted switching cycles in presence of a few diodes with high turn-off dI/dt which results in a negative gate voltage induced by the source inductance. Modelling is performed which confirms the theory described to explain the root cause of the continued oscillatory transients and comparisons are made with standalone SiC power MOSFETs.

U2 - 10.1016/j.microrel.2020.113752

DO - 10.1016/j.microrel.2020.113752

M3 - Article (Academic Journal)

SN - 0026-2714

VL - 114

JO - Microelectronics Reliability

JF - Microelectronics Reliability

IS - November 2020

M1 - 113752

ER -

Analysis of cyclic spontaneous switchings in GaN & SiC cascodes by snappy turn-off currents

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Analysis of Performance and Reliability of Sub-kV SiC and GaN Cascode Power Electronic Devices

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