Analysis of DC-RF Dispersion in AlGaN/GaN HFETs Using RF Waveform Engineering

C Roff; J Benedikt; Paul Tasker; D. J. Wallis; K. P. Hilton; J. O. Maclean; D. G. Hayes; MJ Uren; Trevor Martin

doi:10.1109/TED.2008.2008674

Analysis of DC-RF Dispersion in AlGaN/GaN HFETs Using RF Waveform Engineering

C Roff, J Benedikt, Paul Tasker, D. J. Wallis, K. P. Hilton, J. O. Maclean, D. G. Hayes, MJ Uren, Trevor Martin

School of Physics

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Abstract

This paper describes how dc-radio-frequency (RF) dispersion manifests itself in AlGaN/GaN heterojunction field-effect transistors when the devices are driven into different RF load impedances. The localized nature of the dispersion in the I-V plane, which is confined to the "knee" region, is observed in both RF waveform and pulsed I-V measurements. The effect is fully reproduced using 2-D physical modeling. The difference in dispersive behaviors has been attributed to the geometry of a trap-induced virtual-gate region and the resulting carrier velocity saturation being overcome by punchthrough effects under high electric fields.

Translated title of the contribution	Analysis of DC-RF Dispersion in AlGaN/GaN HFETs Using RF Waveform Engineering
Original language	English
Pages (from-to)	13 - 19
Number of pages	7
Journal	IEEE Transactions on Electron Devices
Volume	56
Issue number	1
DOIs	https://doi.org/10.1109/TED.2008.2008674
Publication status	Published - Jan 2009

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@article{c6622b8bf19c4212a6c89affb1f5f71e,

title = "Analysis of DC-RF Dispersion in AlGaN/GaN HFETs Using RF Waveform Engineering",

abstract = "This paper describes how dc-radio-frequency (RF) dispersion manifests itself in AlGaN/GaN heterojunction field-effect transistors when the devices are driven into different RF load impedances. The localized nature of the dispersion in the I-V plane, which is confined to the {"}knee{"} region, is observed in both RF waveform and pulsed I-V measurements. The effect is fully reproduced using 2-D physical modeling. The difference in dispersive behaviors has been attributed to the geometry of a trap-induced virtual-gate region and the resulting carrier velocity saturation being overcome by punchthrough effects under high electric fields.",

author = "C Roff and J Benedikt and Paul Tasker and Wallis, {D. J.} and Hilton, {K. P.} and Maclean, {J. O.} and Hayes, {D. G.} and MJ Uren and Trevor Martin",

year = "2009",

month = jan,

doi = "10.1109/TED.2008.2008674",

language = "English",

volume = "56",

pages = "13 -- 19",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

number = "1",

}

TY - JOUR

T1 - Analysis of DC-RF Dispersion in AlGaN/GaN HFETs Using RF Waveform Engineering

AU - Roff, C

AU - Benedikt, J

AU - Tasker, Paul

AU - Wallis, D. J.

AU - Hilton, K. P.

AU - Maclean, J. O.

AU - Hayes, D. G.

AU - Uren, MJ

AU - Martin, Trevor

PY - 2009/1

Y1 - 2009/1

N2 - This paper describes how dc-radio-frequency (RF) dispersion manifests itself in AlGaN/GaN heterojunction field-effect transistors when the devices are driven into different RF load impedances. The localized nature of the dispersion in the I-V plane, which is confined to the "knee" region, is observed in both RF waveform and pulsed I-V measurements. The effect is fully reproduced using 2-D physical modeling. The difference in dispersive behaviors has been attributed to the geometry of a trap-induced virtual-gate region and the resulting carrier velocity saturation being overcome by punchthrough effects under high electric fields.

AB - This paper describes how dc-radio-frequency (RF) dispersion manifests itself in AlGaN/GaN heterojunction field-effect transistors when the devices are driven into different RF load impedances. The localized nature of the dispersion in the I-V plane, which is confined to the "knee" region, is observed in both RF waveform and pulsed I-V measurements. The effect is fully reproduced using 2-D physical modeling. The difference in dispersive behaviors has been attributed to the geometry of a trap-induced virtual-gate region and the resulting carrier velocity saturation being overcome by punchthrough effects under high electric fields.

UR - http://www.scopus.com/inward/record.url?eid=2-s2.0-68949113524&partnerID=8YFLogxK

U2 - 10.1109/TED.2008.2008674

DO - 10.1109/TED.2008.2008674

M3 - Article (Academic Journal)

SN - 0018-9383

VL - 56

SP - 13

EP - 19

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 1

ER -

Analysis of DC-RF Dispersion in AlGaN/GaN HFETs Using RF Waveform Engineering

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