Analysis of DC-RF Dispersion in AlGaN/GaN HFETs Using RF Waveform Engineering

C Roff, J Benedikt, Paul Tasker, D. J. Wallis, K. P. Hilton, J. O. Maclean, D. G. Hayes, MJ Uren, Trevor Martin

Research output: Contribution to journalArticle (Academic Journal)peer-review

67 Citations (Scopus)
524 Downloads (Pure)

Abstract

This paper describes how dc-radio-frequency (RF) dispersion manifests itself in AlGaN/GaN heterojunction field-effect transistors when the devices are driven into different RF load impedances. The localized nature of the dispersion in the I-V plane, which is confined to the "knee" region, is observed in both RF waveform and pulsed I-V measurements. The effect is fully reproduced using 2-D physical modeling. The difference in dispersive behaviors has been attributed to the geometry of a trap-induced virtual-gate region and the resulting carrier velocity saturation being overcome by punchthrough effects under high electric fields.
Translated title of the contributionAnalysis of DC-RF Dispersion in AlGaN/GaN HFETs Using RF Waveform Engineering
Original languageEnglish
Pages (from-to)13 - 19
Number of pages7
JournalIEEE Transactions on Electron Devices
Volume56
Issue number1
DOIs
Publication statusPublished - Jan 2009

Fingerprint

Dive into the research topics of 'Analysis of DC-RF Dispersion in AlGaN/GaN HFETs Using RF Waveform Engineering'. Together they form a unique fingerprint.

Cite this