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Analysis of dynamic performance and robustness of silicon and SiC power electronics devices
Saeed Jahdi
*
*
Corresponding author for this work
School of Electrical, Electronic and Mechanical Engineering
Electrical Energy Management
Research output
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Other contribution
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PhD thesis (not Bristol)
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Engineering
Dynamic Performance
100%
Power Electronic Device
100%
Metal-Oxide-Semiconductor Field-Effect Transistor
100%
Power Device
33%
Energy Engineering
22%
Switching Loss
11%
Resistive
11%
Experimental Measurement
11%
Increasing Temperature
11%
Miller Capacitance
11%
Conduction Loss
11%
Conversion Efficiency
11%
Low-Temperature
11%
Key Parameter
11%
Gate Bias
11%
Link Voltage
11%
Input Capacitance
11%
Bipolar Transistor
11%
Diode Turn
11%
Analytical Model
11%
Temperature Dependence
11%
Positive Temperature Coefficient
11%