Analysis of power device failure under avalanche mode Conduction

P. Alexakis, O. Alatise, J. Hu, S. Jahdi, J. Ortiz Gonzalez, L. Ran, P. A. Mawby

Research output: Chapter in Book/Report/Conference proceedingConference Contribution (Conference Proceeding)

12 Citations (Scopus)

Abstract

This paper investigates the physics of device failure during avalanche for 1.2 kV SiC MOSFETs, silicon MOSFETs and silicon IGBTs. The impact of ambient temperature, initial conditions of the device prior to avalanche breakdown and the avalanche duration is explored for the different technologies. Two types of tests were conducted namely (i) constant avalanche duration with different peak avalanche currents and (ii) constant peak avalanche current with different avalanche durations. SiC MOSFETs are shown to be the most rugged technology followed by the silicon IGBT and the silicon MOSFET. The material properties of SiC suppress the triggering of the parasitic BJT that causes thermal runaway during avalanche.

Original languageEnglish
Title of host publication9th International Conference on Power Electronics - ECCE Asia
Subtitle of host publication"Green World with Power Electronics", ICPE 2015-ECCE Asia
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages1833-1839
Number of pages7
ISBN (Electronic)9788957082546
DOIs
Publication statusPublished - 27 Jul 2015
Event9th International Conference on Power Electronics - ECCE Asia, ICPE 2015-ECCE Asia - Seoul, Korea, Republic of
Duration: 1 Jun 20155 Jun 2015

Conference

Conference9th International Conference on Power Electronics - ECCE Asia, ICPE 2015-ECCE Asia
Country/TerritoryKorea, Republic of
CitySeoul
Period1/06/155/06/15

Keywords

  • Avalanche Conduction
  • MOSFET
  • Reliability
  • Silicon Carbide

Fingerprint

Dive into the research topics of 'Analysis of power device failure under avalanche mode Conduction'. Together they form a unique fingerprint.

Cite this