Analysis of the 1st and 3rd Quadrant Transients of Symmetrical and Asymmetrical Double-Trench SiC Power MOSFETs

Juefei Yang; Saeed Jahdi; Bernard Stark; Olayiwola Alatise; Jose Angel Ortiz Gonzalez; Phil Mellor

doi:10.1109/OJPEL.2021.3072503

Analysis of the 1st and 3rd Quadrant Transients of Symmetrical and Asymmetrical Double-Trench SiC Power MOSFETs

Juefei Yang^*, Saeed Jahdi, Bernard Stark, Olayiwola Alatise, Jose Angel Ortiz Gonzalez, Phil Mellor

^*Corresponding author for this work

Research output: Contribution to journal › Article (Academic Journal) › peer-review

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Abstract

In this paper, performance at 1st and 3rd quadrant operation of Silicon and Silicon Carbide (SiC) symmetrical and asymmetrical double-trench, superjunction and planar power MOSFETs is analysed through a wide range of experimental measurements using compact modeling. The devices are evaluated on a high voltage clamped inductive switching test rig and switched at a range of switching rates at elevated junction temperatures. It is shown, experimentally, that in the 1st quadrant, CoolSiC (SiC asymmetrical double-trench) MOSFET and SiC symmetrical double-trench MOSFET demonstrate more stable temperature
coefficients. Silicon Superjunction MOSFETs exhibits the lowest turn-off switching rates due to the large input capacitance. The evaluated SiC Planar MOSFET also performs sub-optimally at turn-on switching due to its higher input capacitance and shows more temperature sensitivity due to its lower threshold voltage. In the 3rd quadrant, the relatively larger reverse recovery charge of Silicon Superjunction MOSFET negatively impacts the turn-OFF transients compared with the SiC MOSFETs. It is also seen that among the SiC
MOSFETs, the two double-trench MOSFET structures outperform the selected SiC planar MOSFET in terms of reverse recovery.

Original language	English
Pages (from-to)	265-276
Number of pages	12
Journal	IEEE Open Journal of Power Electronics
Volume	2
Early online date	12 Apr 2021
DOIs	https://doi.org/10.1109/OJPEL.2021.3072503
Publication status	Published - 3 May 2021

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Reliability analysis of planar and symmetrical & asymmetrical trench discrete SiC Power MOSFETs
Yang, J. (Author), Jahdi, S. (Supervisor) & Stark, B. (Supervisor), 5 Dec 2023
Student thesis: Doctoral Thesis › Doctor of Philosophy (PhD)

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title = "Analysis of the 1st and 3rd Quadrant Transients of Symmetrical and Asymmetrical Double-Trench SiC Power MOSFETs",

abstract = "In this paper, performance at 1st and 3rd quadrant operation of Silicon and Silicon Carbide (SiC) symmetrical and asymmetrical double-trench, superjunction and planar power MOSFETs is analysed through a wide range of experimental measurements using compact modeling. The devices are evaluated on a high voltage clamped inductive switching test rig and switched at a range of switching rates at elevated junction temperatures. It is shown, experimentally, that in the 1st quadrant, CoolSiC (SiC asymmetrical double-trench) MOSFET and SiC symmetrical double-trench MOSFET demonstrate more stable temperaturecoefficients. Silicon Superjunction MOSFETs exhibits the lowest turn-off switching rates due to the large input capacitance. The evaluated SiC Planar MOSFET also performs sub-optimally at turn-on switching due to its higher input capacitance and shows more temperature sensitivity due to its lower threshold voltage. In the 3rd quadrant, the relatively larger reverse recovery charge of Silicon Superjunction MOSFET negatively impacts the turn-OFF transients compared with the SiC MOSFETs. It is also seen that among the SiCMOSFETs, the two double-trench MOSFET structures outperform the selected SiC planar MOSFET in terms of reverse recovery.",

author = "Juefei Yang and Saeed Jahdi and Bernard Stark and Olayiwola Alatise and {Ortiz Gonzalez}, {Jose Angel} and Phil Mellor",

year = "2021",

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doi = "10.1109/OJPEL.2021.3072503",

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T1 - Analysis of the 1st and 3rd Quadrant Transients of Symmetrical and Asymmetrical Double-Trench SiC Power MOSFETs

AU - Yang, Juefei

AU - Jahdi, Saeed

AU - Stark, Bernard

AU - Alatise, Olayiwola

AU - Ortiz Gonzalez, Jose Angel

AU - Mellor, Phil

PY - 2021/5/3

Y1 - 2021/5/3

N2 - In this paper, performance at 1st and 3rd quadrant operation of Silicon and Silicon Carbide (SiC) symmetrical and asymmetrical double-trench, superjunction and planar power MOSFETs is analysed through a wide range of experimental measurements using compact modeling. The devices are evaluated on a high voltage clamped inductive switching test rig and switched at a range of switching rates at elevated junction temperatures. It is shown, experimentally, that in the 1st quadrant, CoolSiC (SiC asymmetrical double-trench) MOSFET and SiC symmetrical double-trench MOSFET demonstrate more stable temperaturecoefficients. Silicon Superjunction MOSFETs exhibits the lowest turn-off switching rates due to the large input capacitance. The evaluated SiC Planar MOSFET also performs sub-optimally at turn-on switching due to its higher input capacitance and shows more temperature sensitivity due to its lower threshold voltage. In the 3rd quadrant, the relatively larger reverse recovery charge of Silicon Superjunction MOSFET negatively impacts the turn-OFF transients compared with the SiC MOSFETs. It is also seen that among the SiCMOSFETs, the two double-trench MOSFET structures outperform the selected SiC planar MOSFET in terms of reverse recovery.

AB - In this paper, performance at 1st and 3rd quadrant operation of Silicon and Silicon Carbide (SiC) symmetrical and asymmetrical double-trench, superjunction and planar power MOSFETs is analysed through a wide range of experimental measurements using compact modeling. The devices are evaluated on a high voltage clamped inductive switching test rig and switched at a range of switching rates at elevated junction temperatures. It is shown, experimentally, that in the 1st quadrant, CoolSiC (SiC asymmetrical double-trench) MOSFET and SiC symmetrical double-trench MOSFET demonstrate more stable temperaturecoefficients. Silicon Superjunction MOSFETs exhibits the lowest turn-off switching rates due to the large input capacitance. The evaluated SiC Planar MOSFET also performs sub-optimally at turn-on switching due to its higher input capacitance and shows more temperature sensitivity due to its lower threshold voltage. In the 3rd quadrant, the relatively larger reverse recovery charge of Silicon Superjunction MOSFET negatively impacts the turn-OFF transients compared with the SiC MOSFETs. It is also seen that among the SiCMOSFETs, the two double-trench MOSFET structures outperform the selected SiC planar MOSFET in terms of reverse recovery.

U2 - 10.1109/OJPEL.2021.3072503

DO - 10.1109/OJPEL.2021.3072503

M3 - Article (Academic Journal)

SN - 2644-1314

VL - 2

SP - 265

EP - 276

JO - IEEE Open Journal of Power Electronics

JF - IEEE Open Journal of Power Electronics

ER -

Analysis of the 1st and 3rd Quadrant Transients of Symmetrical and Asymmetrical Double-Trench SiC Power MOSFETs

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Reliability analysis of planar and symmetrical & asymmetrical trench discrete SiC Power MOSFETs

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