The electrical behavior (capacitance-voltage and current-voltage) of MOS-like structures with silicon rich silicon oxide (SRO) as the dielectric material has been studied. The SRO active layer has been obtained by three different CMOS compatible techniques, namely low pressure chemical vapor deposition (LPCVD), plasma enhanced chemical vapor deposition (PECVD) and ion implantation. Different silicon excesses have been analyzed. The results have been related to the electroluminescent behavior of the samples. Two different conduction regimes have been identified: a high leakage regime and a low leakage regime. The former is related to an anomalous C-V behavior and to the luminescence from a limited number of dots in the area of the devices whereas the latter is related to a regular C-V behavior and to the homogeneous luminescence of the whole area of the devices.