Annealing-induced evolution of boron-doped polycrystalline diamond

Gufei Zhang; Ramiz Zulkharnay; Paul W May; Limin Yang

doi:10.1103/PhysRevMaterials.8.044802

Annealing-induced evolution of boron-doped polycrystalline diamond

Gufei Zhang^*
, Ramiz Zulkharnay
, Paul W May
, Limin Yang

^*Corresponding author for this work

Research output: Contribution to journal › Article (Academic Journal) › peer-review

3 Citations (Scopus)

47 Downloads (Pure)

Abstract

Diamond shows great promise for opening up new paradigms in the semiconductor industry and quantum electronics. Here, we investigate the influence of thermal annealing on the structural and electrical transport properties of heavily boron-doped polycrystalline diamond (BPD) thin films. Our structural analyses show that annealing beyond 600 ◦C can induce severe local amorphization in a BPD thin film and transform it into a binary mixture of spatially separate domains of amorphous carbon (a-C) and diamond grains. Due to this annealing-induced morphology and phase segregation, the BPD thin films demonstrate a significant decrease of the electron localization radius and a distinct increase of the Ginzburg-Landau coherence length. Our research provides physical insight into the conversion of diamond to a-C and aids in defining the application scope of BPD by revealing its heat tolerance.

Original language	English
Article number	044802
Number of pages	8
Journal	Physical Review Materials
Volume	8
Issue number	4
DOIs	https://doi.org/10.1103/PhysRevMaterials.8.044802
Publication status	Published - 12 Apr 2024

Bibliographical note

Publisher Copyright:
© 2024 American Physical Society.

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3 Citations
6 Article (Academic Journal)

Quantum Depletion of Superconductivity in 3D Diamond Nanowires
Zhang, G., Collienne, S., Zulkharnay, R., Ke, X., Liu, L., Li, S., Zhang, S., Zhang, Y., Li, Y., Asger Mortensen, N., Moshchalkov, V., Zhu, J., Silhanek, A. & May, P. W., 14 Dec 2024, (E-pub ahead of print) In: Advanced Quantum Technologies. 8 p., 2400476.
Research output: Contribution to journal › Article (Academic Journal) › peer-review

Open Access
1 Citation (Scopus)
Unconventional Giant “Magnetoresistance” in Bosonic Semiconducting Diamond Nanorings
Zhang, G., Zulkharnay, R., Ke, X., Liao, M., Liu, L., Guo, Y., Li, Y., Rubahn, H. G., Moshchalkov, V. V. & May, P. W., 1 Jun 2023, In: Advanced Materials. 35, 22, 2211129.
Research output: Contribution to journal › Article (Academic Journal) › peer-review

Open Access
8 Citations (Scopus)
Yu-Shiba-Rusinov bands in ferromagnetic superconducting diamond
Zhang, G., May, P. W., Rubahn, H.-G. & al., E., 15 May 2020, In: Science Advances. 6, 20, 5 p., eaaz2536.
Research output: Contribution to journal › Article (Academic Journal) › peer-review

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19 Citations (Scopus)

131 Downloads (Pure)

Cite this

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title = "Annealing-induced evolution of boron-doped polycrystalline diamond",

abstract = "Diamond shows great promise for opening up new paradigms in the semiconductor industry and quantum electronics. Here, we investigate the influence of thermal annealing on the structural and electrical transport properties of heavily boron-doped polycrystalline diamond (BPD) thin films. Our structural analyses show that annealing beyond 600 ◦C can induce severe local amorphization in a BPD thin film and transform it into a binary mixture of spatially separate domains of amorphous carbon (a-C) and diamond grains. Due to this annealing-induced morphology and phase segregation, the BPD thin films demonstrate a significant decrease of the electron localization radius and a distinct increase of the Ginzburg-Landau coherence length. Our research provides physical insight into the conversion of diamond to a-C and aids in defining the application scope of BPD by revealing its heat tolerance.",

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N2 - Diamond shows great promise for opening up new paradigms in the semiconductor industry and quantum electronics. Here, we investigate the influence of thermal annealing on the structural and electrical transport properties of heavily boron-doped polycrystalline diamond (BPD) thin films. Our structural analyses show that annealing beyond 600 ◦C can induce severe local amorphization in a BPD thin film and transform it into a binary mixture of spatially separate domains of amorphous carbon (a-C) and diamond grains. Due to this annealing-induced morphology and phase segregation, the BPD thin films demonstrate a significant decrease of the electron localization radius and a distinct increase of the Ginzburg-Landau coherence length. Our research provides physical insight into the conversion of diamond to a-C and aids in defining the application scope of BPD by revealing its heat tolerance.

AB - Diamond shows great promise for opening up new paradigms in the semiconductor industry and quantum electronics. Here, we investigate the influence of thermal annealing on the structural and electrical transport properties of heavily boron-doped polycrystalline diamond (BPD) thin films. Our structural analyses show that annealing beyond 600 ◦C can induce severe local amorphization in a BPD thin film and transform it into a binary mixture of spatially separate domains of amorphous carbon (a-C) and diamond grains. Due to this annealing-induced morphology and phase segregation, the BPD thin films demonstrate a significant decrease of the electron localization radius and a distinct increase of the Ginzburg-Landau coherence length. Our research provides physical insight into the conversion of diamond to a-C and aids in defining the application scope of BPD by revealing its heat tolerance.

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ER -

Annealing-induced evolution of boron-doped polycrystalline diamond

Abstract

Bibliographical note

UN SDGs

Research Groups and Themes

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Research output

Quantum Depletion of Superconductivity in 3D Diamond Nanowires

Unconventional Giant “Magnetoresistance” in Bosonic Semiconducting Diamond Nanorings

Yu-Shiba-Rusinov bands in ferromagnetic superconducting diamond

Cite this