An anomalous kink effect has been observed in the room-temperature drain current I(D) versus drain voltage V(DS) characteristics of GaN high electron mobility transistors. The kink is originated by a buildup (at low V(DS)) and subsequent release (at high V(DS)) of negative charge, resulting in a shift of pinch-off voltage V(P) toward more negative voltages and in a sudden increase in I(D). The kink is characterized by extremely long negative charge buildup times and by a nonmonotonic behavior as a function of photon energy under illumination. The presence of traps in the GaN buffer may explain both spectrally resolved photostimulation data and the slow negative charge buildup.
|Translated title of the contribution||Anomalous Kink Effect in GaN High Electron Mobility Transistors|
|Pages (from-to)||100 - 102|
|Number of pages||3|
|Journal||IEEE Electron Device Letters|
|Publication status||Published - Feb 2009|