Anomalous Kink Effect in GaN High Electron Mobility Transistors

G Meneghesso, F Zanon, MJ Uren, E Zanoni

Research output: Contribution to journalArticle (Academic Journal)peer-review

93 Citations (Scopus)


An anomalous kink effect has been observed in the room-temperature drain current I(D) versus drain voltage V(DS) characteristics of GaN high electron mobility transistors. The kink is originated by a buildup (at low V(DS)) and subsequent release (at high V(DS)) of negative charge, resulting in a shift of pinch-off voltage V(P) toward more negative voltages and in a sudden increase in I(D). The kink is characterized by extremely long negative charge buildup times and by a nonmonotonic behavior as a function of photon energy under illumination. The presence of traps in the GaN buffer may explain both spectrally resolved photostimulation data and the slow negative charge buildup.
Translated title of the contributionAnomalous Kink Effect in GaN High Electron Mobility Transistors
Original languageEnglish
Pages (from-to)100 - 102
Number of pages3
JournalIEEE Electron Device Letters
Issue number2
Publication statusPublished - Feb 2009

Bibliographical note

Publisher: IEEE


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