This paper addresses the need for off-state negative gate bias with insulated gate bipolar transistor (IGBT) devices that experience a dv/dt when in the off state. Factors considered include off-state gate bias voltage, gate impedance, reapplied dv/dt, and temperature. Theoretical calculation and experimental results for a high-voltage high-current IGBT supports the assessment of these factors.
|Translated title of the contribution||Assessment of Off-State Negative Gate Voltage Requirements for IGBT’s|
|Pages (from-to)||436 - 440|
|Number of pages||5|
|Journal||IEEE Transactions on Power Electronics|
|Publication status||Published - 1998|