Assessment of Off-State Negative Gate Voltage Requirements for IGBT’s

JN McNeill, K Sheng, BW Williams, SJ Finney

Research output: Contribution to journalArticle (Academic Journal)

21 Citations (Scopus)

Abstract

This paper addresses the need for off-state negative gate bias with insulated gate bipolar transistor (IGBT) devices that experience a dv/dt when in the off state. Factors considered include off-state gate bias voltage, gate impedance, reapplied dv/dt, and temperature. Theoretical calculation and experimental results for a high-voltage high-current IGBT supports the assessment of these factors.
Translated title of the contributionAssessment of Off-State Negative Gate Voltage Requirements for IGBT’s
Original languageEnglish
Pages (from-to)436 - 440
Number of pages5
JournalIEEE Transactions on Power Electronics
Publication statusPublished - 1998

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