Abstract
This paper addresses the need for off-state negative gate bias with insulated gate bipolar transistor (IGBT) devices that experience a dv/dt when in the off state. Factors considered include off-state gate bias voltage, gate impedance, reapplied dv/dt, and temperature. Theoretical calculation and experimental results for a high-voltage high-current IGBT supports the assessment of these factors.
| Translated title of the contribution | Assessment of Off-State Negative Gate Voltage Requirements for IGBT’s |
|---|---|
| Original language | English |
| Pages (from-to) | 436 - 440 |
| Number of pages | 5 |
| Journal | IEEE Transactions on Power Electronics |
| Publication status | Published - 1998 |
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