Atomically Engineered Metal-Insulator Transition at the TiO2/LaAlO3 Heterointerface

M. Minohara, T. Tachikawa, Y. Nakanishi, Yasuyuki Hikita, L. Fitting-Kourkoutis, J.-S. Lee, CC Kao, M. Yoshita, H. Akiyama, Chris Bell, Harold Y. Hwang

Research output: Contribution to journalArticle (Academic Journal)peer-review

Abstract

We demonstrate that the atomic boundary conditions of simple binary oxides can be used to impart dramatic changes of state. By changing the substrate surface termination of LaAlO3 (001) from AlO2 to LaO, the room-temperature sheet conductance of anatase TiO2 films are increased by over 3 orders of magnitude, transforming the intrinsic insulating state to a high mobility metallic state, while maintaining excellent optical transparency.
Original languageEnglish
Pages (from-to)6743–6746
JournalNano Letters
Volume14
Issue number11
Publication statusPublished - 2014

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