Atomically Engineered Metal-Insulator Transition at the TiO2/LaAlO3 Heterointerface

M. Minohara; T. Tachikawa; Y. Nakanishi; Yasuyuki Hikita; L. Fitting-Kourkoutis; J.-S. Lee; CC Kao; M. Yoshita; H. Akiyama; Chris Bell; Harold Y. Hwang

Atomically Engineered Metal-Insulator Transition at the TiO2/LaAlO3 Heterointerface

M. Minohara
, T. Tachikawa
, Y. Nakanishi
, Yasuyuki Hikita
, L. Fitting-Kourkoutis
, J.-S. Lee
, CC Kao
, M. Yoshita
, H. Akiyama
, Chris Bell
, Harold Y. Hwang

School of Physics

Research output: Contribution to journal › Article (Academic Journal) › peer-review

26 Citations (Scopus)

Abstract

We demonstrate that the atomic boundary conditions of simple binary oxides can be used to impart dramatic changes of state. By changing the substrate surface termination of LaAlO3 (001) from AlO2 to LaO, the room-temperature sheet conductance of anatase TiO2 films are increased by over 3 orders of magnitude, transforming the intrinsic insulating state to a high mobility metallic state, while maintaining excellent optical transparency.

Original language	English
Pages (from-to)	6743–6746
Journal	Nano Letters
Volume	14
Issue number	11
Publication status	Published - 2014

Handle.net

Persistent link

Cite this

@article{3b2a13bc9f634bbe9009b9f62256f44a,

title = "Atomically Engineered Metal-Insulator Transition at the TiO2/LaAlO3 Heterointerface",

abstract = "We demonstrate that the atomic boundary conditions of simple binary oxides can be used to impart dramatic changes of state. By changing the substrate surface termination of LaAlO3 (001) from AlO2 to LaO, the room-temperature sheet conductance of anatase TiO2 films are increased by over 3 orders of magnitude, transforming the intrinsic insulating state to a high mobility metallic state, while maintaining excellent optical transparency.",

author = "M. Minohara and T. Tachikawa and Y. Nakanishi and Yasuyuki Hikita and L. Fitting-Kourkoutis and J.-S. Lee and CC Kao and M. Yoshita and H. Akiyama and Chris Bell and Hwang, \{Harold Y.\}",

year = "2014",

language = "English",

volume = "14",

pages = "6743–6746",

journal = "Nano Letters",

issn = "1530-6984",

publisher = "American Chemical Society",

number = "11",

}

TY - JOUR

T1 - Atomically Engineered Metal-Insulator Transition at the TiO2/LaAlO3 Heterointerface

AU - Minohara, M.

AU - Tachikawa, T.

AU - Nakanishi, Y.

AU - Hikita, Yasuyuki

AU - Fitting-Kourkoutis, L.

AU - Lee, J.-S.

AU - Kao, CC

AU - Yoshita, M.

AU - Akiyama, H.

AU - Bell, Chris

AU - Hwang, Harold Y.

PY - 2014

Y1 - 2014

N2 - We demonstrate that the atomic boundary conditions of simple binary oxides can be used to impart dramatic changes of state. By changing the substrate surface termination of LaAlO3 (001) from AlO2 to LaO, the room-temperature sheet conductance of anatase TiO2 films are increased by over 3 orders of magnitude, transforming the intrinsic insulating state to a high mobility metallic state, while maintaining excellent optical transparency.

AB - We demonstrate that the atomic boundary conditions of simple binary oxides can be used to impart dramatic changes of state. By changing the substrate surface termination of LaAlO3 (001) from AlO2 to LaO, the room-temperature sheet conductance of anatase TiO2 films are increased by over 3 orders of magnitude, transforming the intrinsic insulating state to a high mobility metallic state, while maintaining excellent optical transparency.

M3 - Article (Academic Journal)

SN - 1530-6984

VL - 14

SP - 6743

EP - 6746

JO - Nano Letters

JF - Nano Letters

IS - 11

ER -

Atomically Engineered Metal-Insulator Transition at the TiO2/LaAlO3 Heterointerface

Abstract

Handle.net

Fingerprint

Cite this