Auxiliary Resonant Source Charge Extraction Circuitry for Enabling the Use of Super Junction MOSFETs in High Efficiency DC-DC converters

Andrew Hopkins; Nick Simpson; Neville McNeill

doi:10.1109/APEC.2019.8722080

Auxiliary Resonant Source Charge Extraction Circuitry for Enabling the Use of Super Junction MOSFETs in High Efficiency DC-DC converters

Andrew Hopkins, Nick Simpson, Neville McNeill

Research output: Chapter in Book/Report/Conference proceeding › Conference Contribution (Conference Proceeding)

1 Citation (Scopus)

218 Downloads (Pure)

Abstract

In this paper a high efficiency DC-DC converter power stage employing silicon Super-Junction (SJ) MOSFETs is presented. These devices have low on-state resistances and fast switching capabilities. However, their intrinsic body diode has a very poor reverse recovery behavior and they have an output capacitance that has a highly non-linear inverse relationship with voltage. These characteristics lead to problematic charging currents when they are used in bidirectional voltage source converters. These problems are addressed through implementation of an auxiliary resonant source charge extraction circuit in conjunction with anti-series MOSFETs. The result is a 5-kW power converter with a power semiconductor stage full-load efficiency exceeding 99% and requiring no forced cooling.

Original language	English
Title of host publication	34th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2019
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	2159-2166
Number of pages	8
Volume	2019-March
ISBN (Electronic)	9781538683309
ISBN (Print)	9781538683316
DOIs	https://doi.org/10.1109/APEC.2019.8722080
Publication status	Published - 27 May 2019
Event	34th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2019 - Anaheim, United States Duration: 17 Mar 2019 → 21 Mar 2019

Publication series

Name	Applied Power Electronics Conference and Exposition (APEC)
Publisher	IEEE
ISSN (Print)	1048-2334
ISSN (Electronic)	2470-6647

Conference

Conference	34th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2019
Country/Territory	United States
City	Anaheim
Period	17/03/19 → 21/03/19

Keywords

auxiliary resonant topology, diode reverse recovery, MOSFET, output capacitance, super-junction, switching-aid circuit

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10.1109/APEC.2019.8722080

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This is the accepted author manuscript (AAM). The final published version (version of record) is available online via IEEE at https://doi.org/10.1109/APEC.2019.8722080 . Please refer to any applicable terms of use of the publisher.
Accepted author manuscript, 1.02 MBLicence: Other

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Hopkins, A., Simpson, N., & McNeill, N. (2019). Auxiliary Resonant Source Charge Extraction Circuitry for Enabling the Use of Super Junction MOSFETs in High Efficiency DC-DC converters. In 34th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2019 (Vol. 2019-March, pp. 2159-2166). [8722080] (Applied Power Electronics Conference and Exposition (APEC)). Institute of Electrical and Electronics Engineers (IEEE). https://doi.org/10.1109/APEC.2019.8722080

Hopkins, Andrew ; Simpson, Nick ; McNeill, Neville. / Auxiliary Resonant Source Charge Extraction Circuitry for Enabling the Use of Super Junction MOSFETs in High Efficiency DC-DC converters. 34th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2019. Vol. 2019-March Institute of Electrical and Electronics Engineers (IEEE), 2019. pp. 2159-2166 (Applied Power Electronics Conference and Exposition (APEC)).

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title = "Auxiliary Resonant Source Charge Extraction Circuitry for Enabling the Use of Super Junction MOSFETs in High Efficiency DC-DC converters",

abstract = " In this paper a high efficiency DC-DC converter power stage employing silicon Super-Junction (SJ) MOSFETs is presented. These devices have low on-state resistances and fast switching capabilities. However, their intrinsic body diode has a very poor reverse recovery behavior and they have an output capacitance that has a highly non-linear inverse relationship with voltage. These characteristics lead to problematic charging currents when they are used in bidirectional voltage source converters. These problems are addressed through implementation of an auxiliary resonant source charge extraction circuit in conjunction with anti-series MOSFETs. The result is a 5-kW power converter with a power semiconductor stage full-load efficiency exceeding 99% and requiring no forced cooling. ",

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author = "Andrew Hopkins and Nick Simpson and Neville McNeill",

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Hopkins, A , Simpson, N & McNeill, N 2019, Auxiliary Resonant Source Charge Extraction Circuitry for Enabling the Use of Super Junction MOSFETs in High Efficiency DC-DC converters. in 34th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2019. vol. 2019-March, 8722080, Applied Power Electronics Conference and Exposition (APEC), Institute of Electrical and Electronics Engineers (IEEE), pp. 2159-2166, 34th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2019, Anaheim, United States, 17/03/19. https://doi.org/10.1109/APEC.2019.8722080

Auxiliary Resonant Source Charge Extraction Circuitry for Enabling the Use of Super Junction MOSFETs in High Efficiency DC-DC converters. / Hopkins, Andrew ; Simpson, Nick; McNeill, Neville.
34th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2019. Vol. 2019-March Institute of Electrical and Electronics Engineers (IEEE), 2019. p. 2159-2166 8722080 (Applied Power Electronics Conference and Exposition (APEC)).

Research output: Chapter in Book/Report/Conference proceeding › Conference Contribution (Conference Proceeding)

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T1 - Auxiliary Resonant Source Charge Extraction Circuitry for Enabling the Use of Super Junction MOSFETs in High Efficiency DC-DC converters

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AU - Simpson, Nick

AU - McNeill, Neville

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N2 - In this paper a high efficiency DC-DC converter power stage employing silicon Super-Junction (SJ) MOSFETs is presented. These devices have low on-state resistances and fast switching capabilities. However, their intrinsic body diode has a very poor reverse recovery behavior and they have an output capacitance that has a highly non-linear inverse relationship with voltage. These characteristics lead to problematic charging currents when they are used in bidirectional voltage source converters. These problems are addressed through implementation of an auxiliary resonant source charge extraction circuit in conjunction with anti-series MOSFETs. The result is a 5-kW power converter with a power semiconductor stage full-load efficiency exceeding 99% and requiring no forced cooling.

AB - In this paper a high efficiency DC-DC converter power stage employing silicon Super-Junction (SJ) MOSFETs is presented. These devices have low on-state resistances and fast switching capabilities. However, their intrinsic body diode has a very poor reverse recovery behavior and they have an output capacitance that has a highly non-linear inverse relationship with voltage. These characteristics lead to problematic charging currents when they are used in bidirectional voltage source converters. These problems are addressed through implementation of an auxiliary resonant source charge extraction circuit in conjunction with anti-series MOSFETs. The result is a 5-kW power converter with a power semiconductor stage full-load efficiency exceeding 99% and requiring no forced cooling.

KW - auxiliary resonant topology, diode reverse recovery, MOSFET, output capacitance, super-junction, switching-aid circuit

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T2 - 34th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2019

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Hopkins A , Simpson N, McNeill N. Auxiliary Resonant Source Charge Extraction Circuitry for Enabling the Use of Super Junction MOSFETs in High Efficiency DC-DC converters. In 34th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2019. Vol. 2019-March. Institute of Electrical and Electronics Engineers (IEEE). 2019. p. 2159-2166. 8722080. (Applied Power Electronics Conference and Exposition (APEC)). doi: 10.1109/APEC.2019.8722080

Auxiliary Resonant Source Charge Extraction Circuitry for Enabling the Use of Super Junction MOSFETs in High Efficiency DC-DC converters

Abstract

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