Back bias ramping and photoionization spectroscopy analysis of GaN-on-Si HFETs

A. Pooth, T. Martin, M. J. Uren, M. Kuball

Research output: Chapter in Book/Report/Conference proceedingConference Contribution (Conference Proceeding)

Abstract

In this work, we demonstrate how two methods, namely back bias ramping and photoionization spectroscopy, can be combined to provide important, new information on charge movement in buffer layers of GaN-based Heterostructure-Field-Effect-Transistors. The identification of such effects will help to understand and control the current collapse effect, which is linked to these layers.

Original languageEnglish
Title of host publicationCS MANTECH 2016 - International Conference on Compound Semiconductor Manufacturing Technology
PublisherCS Mantech
Pages73-75
Number of pages3
Publication statusPublished - 2016
Event31st Annual International Conference on Compound Semiconductor Manufacturing Technology, CS ManTech 2016 - Miami, United States
Duration: 16 May 201619 May 2016

Conference

Conference31st Annual International Conference on Compound Semiconductor Manufacturing Technology, CS ManTech 2016
CountryUnited States
CityMiami
Period16/05/1619/05/16

Structured keywords

  • CDTR

Keywords

  • AlGaN/GaN
  • Carbon doping
  • Current collapse
  • GaNonSi
  • HFET

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