Back bias ramping and photoionization spectroscopy analysis of GaN-on-Si HFETs

A. Pooth; T. Martin; M. J. Uren; M. Kuball

Back bias ramping and photoionization spectroscopy analysis of GaN-on-Si HFETs

A. Pooth, T. Martin, M. J. Uren, M. Kuball

Research output: Chapter in Book/Report/Conference proceeding › Conference Contribution (Conference Proceeding)

Abstract

In this work, we demonstrate how two methods, namely back bias ramping and photoionization spectroscopy, can be combined to provide important, new information on charge movement in buffer layers of GaN-based Heterostructure-Field-Effect-Transistors. The identification of such effects will help to understand and control the current collapse effect, which is linked to these layers.

Original language	English
Title of host publication	CS MANTECH 2016 - International Conference on Compound Semiconductor Manufacturing Technology
Publisher	CS Mantech
Pages	73-75
Number of pages	3
Publication status	Published - 2016
Event	31st Annual International Conference on Compound Semiconductor Manufacturing Technology, CS ManTech 2016 - Miami, United States Duration: 16 May 2016 → 19 May 2016

Conference

Conference	31st Annual International Conference on Compound Semiconductor Manufacturing Technology, CS ManTech 2016
Country/Territory	United States
City	Miami
Period	16/05/16 → 19/05/16

Research Groups and Themes

CDTR

Keywords

AlGaN/GaN
Carbon doping
Current collapse
GaNonSi
HFET

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Persistent link

Cite this

@inproceedings{2dfb6fad5ed9419085b02e67df2b1007,

title = "Back bias ramping and photoionization spectroscopy analysis of GaN-on-Si HFETs",

abstract = "In this work, we demonstrate how two methods, namely back bias ramping and photoionization spectroscopy, can be combined to provide important, new information on charge movement in buffer layers of GaN-based Heterostructure-Field-Effect-Transistors. The identification of such effects will help to understand and control the current collapse effect, which is linked to these layers.",

keywords = "AlGaN/GaN, Carbon doping, Current collapse, GaNonSi, HFET",

author = "A. Pooth and T. Martin and Uren, \{M. J.\} and M. Kuball",

year = "2016",

language = "English",

pages = "73--75",

booktitle = "CS MANTECH 2016 - International Conference on Compound Semiconductor Manufacturing Technology",

publisher = "CS Mantech",

note = "31st Annual International Conference on Compound Semiconductor Manufacturing Technology, CS ManTech 2016 ; Conference date: 16-05-2016 Through 19-05-2016",

}

Pooth, A, Martin, T, Uren, MJ & Kuball, M 2016, Back bias ramping and photoionization spectroscopy analysis of GaN-on-Si HFETs. in CS MANTECH 2016 - International Conference on Compound Semiconductor Manufacturing Technology. CS Mantech, pp. 73-75, 31st Annual International Conference on Compound Semiconductor Manufacturing Technology, CS ManTech 2016, Miami, United States, 16/05/16.

TY - GEN

T1 - Back bias ramping and photoionization spectroscopy analysis of GaN-on-Si HFETs

AU - Pooth, A.

AU - Martin, T.

AU - Uren, M. J.

AU - Kuball, M.

PY - 2016

Y1 - 2016

N2 - In this work, we demonstrate how two methods, namely back bias ramping and photoionization spectroscopy, can be combined to provide important, new information on charge movement in buffer layers of GaN-based Heterostructure-Field-Effect-Transistors. The identification of such effects will help to understand and control the current collapse effect, which is linked to these layers.

AB - In this work, we demonstrate how two methods, namely back bias ramping and photoionization spectroscopy, can be combined to provide important, new information on charge movement in buffer layers of GaN-based Heterostructure-Field-Effect-Transistors. The identification of such effects will help to understand and control the current collapse effect, which is linked to these layers.

KW - AlGaN/GaN

KW - Carbon doping

KW - Current collapse

KW - GaNonSi

KW - HFET

UR - https://www.scopus.com/pages/publications/84978906339

M3 - Conference Contribution (Conference Proceeding)

AN - SCOPUS:84978906339

SP - 73

EP - 75

BT - CS MANTECH 2016 - International Conference on Compound Semiconductor Manufacturing Technology

PB - CS Mantech

T2 - 31st Annual International Conference on Compound Semiconductor Manufacturing Technology, CS ManTech 2016

Y2 - 16 May 2016 through 19 May 2016

ER -

Back bias ramping and photoionization spectroscopy analysis of GaN-on-Si HFETs

Abstract

Conference

Research Groups and Themes

Keywords

Handle.net

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