Abstract
GaN-on-diamond device cooling can be
enhanced by reducing the effective thermal boundary
resistance (TBReff) of the GaN/diamond interface. The
thermal properties of this interface and of the polycrystalline
diamond grown onto GaN using SiN and AlN barrier layers as
well as without any barrier layer under different growth
conditions are investigated and systematically compared for
the first time. TBReff values are correlated with transmission
electron microscopy analysis, showing that the lowest reported
TBReff (∼6.5 m2 K/GW) is obtained by using ultrathin SiN
barrier layers with a smooth interface formed, whereas the
direct growth of diamond onto GaN results in one to two
orders of magnitude higher TBReff due to the formation of a rough interface. AlN barrier layers can produce a TBReff as low as
SiN barrier layers in some cases; however, their TBReff are rather dependent on growth conditions. We also observe a decreasing
diamond thermal resistance with increasing growth temperature.
enhanced by reducing the effective thermal boundary
resistance (TBReff) of the GaN/diamond interface. The
thermal properties of this interface and of the polycrystalline
diamond grown onto GaN using SiN and AlN barrier layers as
well as without any barrier layer under different growth
conditions are investigated and systematically compared for
the first time. TBReff values are correlated with transmission
electron microscopy analysis, showing that the lowest reported
TBReff (∼6.5 m2 K/GW) is obtained by using ultrathin SiN
barrier layers with a smooth interface formed, whereas the
direct growth of diamond onto GaN results in one to two
orders of magnitude higher TBReff due to the formation of a rough interface. AlN barrier layers can produce a TBReff as low as
SiN barrier layers in some cases; however, their TBReff are rather dependent on growth conditions. We also observe a decreasing
diamond thermal resistance with increasing growth temperature.
| Original language | English |
|---|---|
| Pages (from-to) | 34416 |
| Number of pages | 34422 |
| Journal | ACS Applied Materials and Interfaces |
| DOIs | |
| Publication status | Published - 13 Sept 2017 |
Research Groups and Themes
- CDTR
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Professor Martin H H Kuball
- School of Physics - Professor of Physics (Royal Society Wolfson Research Merit Award Holder)
Person: Academic