Barrier-Layer Optimization for Enhanced GaN-on-Diamond Device Cooling

Yan Zhou, Julian Anaya Calvo, James Pomeroy, Huarui Sun, Xing Gu, Andy Xie, Edward Beam, Michael Becker, Timothy A. Grotjohn, Cathy Lee, Martin Kuball

Research output: Contribution to journalArticle (Academic Journal)peer-review

97 Citations (Scopus)


GaN-on-diamond device cooling can be
enhanced by reducing the effective thermal boundary
resistance (TBReff) of the GaN/diamond interface. The
thermal properties of this interface and of the polycrystalline
diamond grown onto GaN using SiN and AlN barrier layers as
well as without any barrier layer under different growth
conditions are investigated and systematically compared for
the first time. TBReff values are correlated with transmission
electron microscopy analysis, showing that the lowest reported
TBReff (∼6.5 m2 K/GW) is obtained by using ultrathin SiN
barrier layers with a smooth interface formed, whereas the
direct growth of diamond onto GaN results in one to two
orders of magnitude higher TBReff due to the formation of a rough interface. AlN barrier layers can produce a TBReff as low as
SiN barrier layers in some cases; however, their TBReff are rather dependent on growth conditions. We also observe a decreasing
diamond thermal resistance with increasing growth temperature.
Original languageEnglish
Pages (from-to)34416
Number of pages34422
JournalACS Applied Materials and Interfaces
Publication statusPublished - 13 Sept 2017

Structured keywords

  • CDTR


Dive into the research topics of 'Barrier-Layer Optimization for Enhanced GaN-on-Diamond Device Cooling'. Together they form a unique fingerprint.

Cite this