Benchmarking of Thermal Boundary Resistance in AlGaN/GaN HEMTs on SiC Substrates: Implications of the Nucleation Layer Microstructure

A Manoi, JW Pomeroy, N Killat, M Kuball

Research output: Contribution to journalArticle (Academic Journal)

106 Citations (Scopus)

Abstract

A thermal boundary resistance (TBR) is associated with the presence of an AlN nucleation layer (NL) in AlGaN/GaN high-electron-mobility transistors (HEMTs) grown on SiC substrates, raising device temperature beyond what is expected from the simple thermal conductivities of the main device layers. TBR was found to differ by up to a factor of four between different device suppliers, all using standard metal-organic chemical vapor deposition (MOCVD) growth techniques, related to the detailed NL microstructure. Optimizing the NL crystalline structure in MOCVD could therefore significantly improve heat extraction from AlGaN/GaN HEMTs into the SiC substrate, potentially reducing peak channel temperature rise by up to 40%, significantly benefiting device reliability.
Translated title of the contributionBenchmarking of Thermal Boundary Resistance in AlGaN/GaN HEMTs on SiC Substrates: Implications of the Nucleation Layer Microstructure
Original languageEnglish
Pages (from-to)1395 - 1397
Number of pages3
JournalIEEE Electron Device Letters
Volume31
Issue number12
DOIs
Publication statusPublished - Dec 2010

Structured keywords

  • CDTR

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