Si(x)N(y) deposited at low temperature was found to improve the breakdown voltage of AlGaN/GaN HEMTs at the expense of current collapse due to the presence of a high density of charge trapping states. On the other hand, stoichiometric Si(3)N(4) film deposited at high temperature was effective in mitigating current slump but no improvement in the breakdown voltage was observed. Combining the benefit of both films, a bi-layer stacked passivation has been employed on the HEMTs. Gate lag measurements revealed that the current collapse was mitigated and the breakdown voltage of the devices was found to increase from 120 V to 238 V upon passivation.
|Translated title of the contribution||Bi-layer Si(x)N(y) passivation on AlGaN/GaN HEMTs to suppress current collapse and improve breakdown|
|Journal||Semiconductor Science and Technology|
|Publication status||Published - Dec 2010|