Bi-layer Si(x)N(y) passivation on AlGaN/GaN HEMTs to suppress current collapse and improve breakdown

K. B. Lee; R. T. Green; P. A. Houston; W. S. Tan; MJ Uren; D. J. Wallis; T. Martin

doi:10.1088/0268-1242/25/12/125010

Bi-layer Si(x)N(y) passivation on AlGaN/GaN HEMTs to suppress current collapse and improve breakdown

K. B. Lee, R. T. Green, P. A. Houston, W. S. Tan, MJ Uren, D. J. Wallis, T. Martin

School of Physics

Research output: Contribution to journal › Article (Academic Journal) › peer-review

5 Citations (Scopus)

Abstract

Si(x)N(y) deposited at low temperature was found to improve the breakdown voltage of AlGaN/GaN HEMTs at the expense of current collapse due to the presence of a high density of charge trapping states. On the other hand, stoichiometric Si(3)N(4) film deposited at high temperature was effective in mitigating current slump but no improvement in the breakdown voltage was observed. Combining the benefit of both films, a bi-layer stacked passivation has been employed on the HEMTs. Gate lag measurements revealed that the current collapse was mitigated and the breakdown voltage of the devices was found to increase from 120 V to 238 V upon passivation.

Translated title of the contribution	Bi-layer Si(x)N(y) passivation on AlGaN/GaN HEMTs to suppress current collapse and improve breakdown
Original language	English
Pages (from-to)	125010
Journal	Semiconductor Science and Technology
Volume	25
DOIs	https://doi.org/10.1088/0268-1242/25/12/125010
Publication status	Published - Dec 2010

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@article{b0d0e79eacf548b28e86adb45eb8b14f,

title = "Bi-layer Si(x)N(y) passivation on AlGaN/GaN HEMTs to suppress current collapse and improve breakdown",

abstract = "Si(x)N(y) deposited at low temperature was found to improve the breakdown voltage of AlGaN/GaN HEMTs at the expense of current collapse due to the presence of a high density of charge trapping states. On the other hand, stoichiometric Si(3)N(4) film deposited at high temperature was effective in mitigating current slump but no improvement in the breakdown voltage was observed. Combining the benefit of both films, a bi-layer stacked passivation has been employed on the HEMTs. Gate lag measurements revealed that the current collapse was mitigated and the breakdown voltage of the devices was found to increase from 120 V to 238 V upon passivation.",

author = "Lee, {K. B.} and Green, {R. T.} and Houston, {P. A.} and Tan, {W. S.} and MJ Uren and Wallis, {D. J.} and T. Martin",

year = "2010",

month = dec,

doi = "10.1088/0268-1242/25/12/125010",

language = "English",

volume = "25",

pages = "125010",

journal = "Semiconductor Science and Technology",

issn = "0268-1242",

publisher = "IOP Publishing",

}

TY - JOUR

T1 - Bi-layer Si(x)N(y) passivation on AlGaN/GaN HEMTs to suppress current collapse and improve breakdown

AU - Lee, K. B.

AU - Green, R. T.

AU - Houston, P. A.

AU - Tan, W. S.

AU - Uren, MJ

AU - Wallis, D. J.

AU - Martin, T.

PY - 2010/12

Y1 - 2010/12

N2 - Si(x)N(y) deposited at low temperature was found to improve the breakdown voltage of AlGaN/GaN HEMTs at the expense of current collapse due to the presence of a high density of charge trapping states. On the other hand, stoichiometric Si(3)N(4) film deposited at high temperature was effective in mitigating current slump but no improvement in the breakdown voltage was observed. Combining the benefit of both films, a bi-layer stacked passivation has been employed on the HEMTs. Gate lag measurements revealed that the current collapse was mitigated and the breakdown voltage of the devices was found to increase from 120 V to 238 V upon passivation.

AB - Si(x)N(y) deposited at low temperature was found to improve the breakdown voltage of AlGaN/GaN HEMTs at the expense of current collapse due to the presence of a high density of charge trapping states. On the other hand, stoichiometric Si(3)N(4) film deposited at high temperature was effective in mitigating current slump but no improvement in the breakdown voltage was observed. Combining the benefit of both films, a bi-layer stacked passivation has been employed on the HEMTs. Gate lag measurements revealed that the current collapse was mitigated and the breakdown voltage of the devices was found to increase from 120 V to 238 V upon passivation.

U2 - 10.1088/0268-1242/25/12/125010

DO - 10.1088/0268-1242/25/12/125010

M3 - Article (Academic Journal)

SN - 0268-1242

VL - 25

SP - 125010

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

ER -

Bi-layer Si(x)N(y) passivation on AlGaN/GaN HEMTs to suppress current collapse and improve breakdown

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