Bias Dependence of Single-Event Upsets in 16 nm FinFET D-Flip-Flops

Balaji Narasimham; Safar Hatami; Ali Anvar; David M. Harris; Alvin Lin; Jung K. Wang; Indranil Chatterjee; Kai Ni; Bharat L. Bhuva; Ronald D. Schrimpf; Robert A. Reed; Mike W. McCurdy

doi:10.1109/TNS.2015.2498927

Bias Dependence of Single-Event Upsets in 16 nm FinFET D-Flip-Flops

Balaji Narasimham, Safar Hatami, Ali Anvar, David M. Harris, Alvin Lin, Jung K. Wang, Indranil Chatterjee, Kai Ni, Bharat L. Bhuva, Ronald D. Schrimpf, Robert A. Reed, Mike W. McCurdy

School of Physics

Research output: Contribution to journal › Article (Academic Journal) › peer-review

36 Citations (Scopus)

489 Downloads (Pure)

Abstract

With fabrication processes migrating from planar devices to FinFETs, the differences in physical structure necessitate evaluating the SEU mechanisms of FinFET-based circuits. Since FinFET-based bi-stable circuits have shown better stability at low supply voltages and hence improved power dissipation, it is also necessary to assess the SEU performance over a range of voltages. In this work, the SEU cross section of FinFET-based D-flip-flops was measured with alpha particles, protons, neutrons, and heavy-ions. Results show a strong exponential increase in the SEU rate with reduction in bias for low-LET particles. Technology Computer Aided Design (TCAD) simulations show that the weak variation of collected charge with supply voltage, combined with the standard bias dependence of critical charge, is responsible for this trend.

Original language	English
Pages (from-to)	2578-2584
Number of pages	7
Journal	IEEE Transactions on Nuclear Science
Volume	62
Issue number	6
Early online date	30 Nov 2015
DOIs	https://doi.org/10.1109/TNS.2015.2498927
Publication status	Published - 11 Dec 2015

Keywords

Alpha particles
SER
finFET
flip-flop
heavy-ions
latch
neutrons
protons
single event
soft error

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10.1109/TNS.2015.2498927

Narasimham_BD_SEE_16nm_FinFET_DFF
This is the author accepted manuscript (AAM). The final published version (version of record) is available online via IEEE at http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=7339714
Accepted author manuscript, 713 KB

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Cite this

@article{861aead9905e456a9f9a6a4c126e3e6c,

title = "Bias Dependence of Single-Event Upsets in 16 nm FinFET D-Flip-Flops",

abstract = "With fabrication processes migrating from planar devices to FinFETs, the differences in physical structure necessitate evaluating the SEU mechanisms of FinFET-based circuits. Since FinFET-based bi-stable circuits have shown better stability at low supply voltages and hence improved power dissipation, it is also necessary to assess the SEU performance over a range of voltages. In this work, the SEU cross section of FinFET-based D-flip-flops was measured with alpha particles, protons, neutrons, and heavy-ions. Results show a strong exponential increase in the SEU rate with reduction in bias for low-LET particles. Technology Computer Aided Design (TCAD) simulations show that the weak variation of collected charge with supply voltage, combined with the standard bias dependence of critical charge, is responsible for this trend.",

keywords = "Alpha particles, SER, finFET, flip-flop, heavy-ions, latch, neutrons, protons, single event, soft error",

author = "Balaji Narasimham and Safar Hatami and Ali Anvar and Harris, {David M.} and Alvin Lin and Wang, {Jung K.} and Indranil Chatterjee and Kai Ni and Bhuva, {Bharat L.} and Schrimpf, {Ronald D.} and Reed, {Robert A.} and McCurdy, {Mike W.}",

year = "2015",

month = dec,

day = "11",

doi = "10.1109/TNS.2015.2498927",

language = "English",

volume = "62",

pages = "2578--2584",

journal = "IEEE Transactions on Nuclear Science",

issn = "0018-9499",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

number = "6",

}

TY - JOUR

T1 - Bias Dependence of Single-Event Upsets in 16 nm FinFET D-Flip-Flops

AU - Narasimham, Balaji

AU - Hatami, Safar

AU - Anvar, Ali

AU - Harris, David M.

AU - Lin, Alvin

AU - Wang, Jung K.

AU - Chatterjee, Indranil

AU - Ni, Kai

AU - Bhuva, Bharat L.

AU - Schrimpf, Ronald D.

AU - Reed, Robert A.

AU - McCurdy, Mike W.

PY - 2015/12/11

Y1 - 2015/12/11

N2 - With fabrication processes migrating from planar devices to FinFETs, the differences in physical structure necessitate evaluating the SEU mechanisms of FinFET-based circuits. Since FinFET-based bi-stable circuits have shown better stability at low supply voltages and hence improved power dissipation, it is also necessary to assess the SEU performance over a range of voltages. In this work, the SEU cross section of FinFET-based D-flip-flops was measured with alpha particles, protons, neutrons, and heavy-ions. Results show a strong exponential increase in the SEU rate with reduction in bias for low-LET particles. Technology Computer Aided Design (TCAD) simulations show that the weak variation of collected charge with supply voltage, combined with the standard bias dependence of critical charge, is responsible for this trend.

AB - With fabrication processes migrating from planar devices to FinFETs, the differences in physical structure necessitate evaluating the SEU mechanisms of FinFET-based circuits. Since FinFET-based bi-stable circuits have shown better stability at low supply voltages and hence improved power dissipation, it is also necessary to assess the SEU performance over a range of voltages. In this work, the SEU cross section of FinFET-based D-flip-flops was measured with alpha particles, protons, neutrons, and heavy-ions. Results show a strong exponential increase in the SEU rate with reduction in bias for low-LET particles. Technology Computer Aided Design (TCAD) simulations show that the weak variation of collected charge with supply voltage, combined with the standard bias dependence of critical charge, is responsible for this trend.

KW - Alpha particles

KW - SER

KW - finFET

KW - flip-flop

KW - heavy-ions

KW - latch

KW - neutrons

KW - protons

KW - single event

KW - soft error

UR - http://www.scopus.com/inward/record.url?scp=84949921256&partnerID=8YFLogxK

U2 - 10.1109/TNS.2015.2498927

DO - 10.1109/TNS.2015.2498927

M3 - Article (Academic Journal)

AN - SCOPUS:84949921256

VL - 62

SP - 2578

EP - 2584

JO - IEEE Transactions on Nuclear Science

JF - IEEE Transactions on Nuclear Science

SN - 0018-9499

IS - 6

ER -