Abstract
We investigate both analytically and numerically the switching, locking and stability properties of a bistable semiconductor ring laser subject to an external optical injection. Minimum optical power required for the injected signal at certain frequency to switch the lasing direction of a bistable semiconductor ring laser from its initially lasing direction to initially nonlasing direction is determined. Locking to the injected signal and stability of the switched laser are investigated to give an area of reliable switching operation. Correspondingly, numerical simulation has been carried out to find successful switching and stable locking region with variable injection power and frequency, and is compared with the analytical results. The region obtained from simulation coincides well with the intersection of switching, locking and stable locking regions. The relation between switching speed and parameters of injected source is also studied numerically.
| Translated title of the contribution | Bistability and switching properties of semiconductor ring lasers with external optical injection |
|---|---|
| Original language | English |
| Pages (from-to) | 41 - 48 |
| Number of pages | 8 |
| Journal | IEEE Journal of Quantum Electronics |
| Volume | 44 (1) |
| DOIs | |
| Publication status | Published - Jan 2008 |