Can laterally overgrown GaN layers be free of structural defects?

D Cherns, Z Liliental-Weber

Research output: Chapter in Book/Report/Conference proceedingConference Contribution (Conference Proceeding)

Translated title of the contributionCan laterally overgrown GaN layers be free of structural defects?
Original languageEnglish
Title of host publicationMaterials Research Society Fall Meeting, Boston Nov 26 - Dec 1, 2000
PublisherMaterial Research Society
Publication statusPublished - 2001

Bibliographical note

Conference Proceedings/Title of Journal: MRS Proceedings
Conference Organiser: Materials Research Society

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