Can laterally overgrown GaN layers be free of structural defects?

D Cherns, Z Liliental-Weber

Research output: Chapter in Book/Report/Conference proceeding › Conference Contribution (Conference Proceeding)

Translated title of the contribution	Can laterally overgrown GaN layers be free of structural defects?
Original language	English
Title of host publication	Materials Research Society Fall Meeting, Boston Nov 26 - Dec 1, 2000
Publisher	Material Research Society
Publication status	Published - 2001

Conference Proceedings/Title of Journal: MRS Proceedings
Conference Organiser: Materials Research Society

Cite this

@inproceedings{74530bf77c4a4ad3b7b6d531c37b0222,

title = "Can laterally overgrown GaN layers be free of structural defects?",

author = "D Cherns and Z Liliental-Weber",

note = "Conference Proceedings/Title of Journal: MRS Proceedings Conference Organiser: Materials Research Society",

year = "2001",

language = "English",

booktitle = "Materials Research Society Fall Meeting, Boston Nov 26 - Dec 1, 2000",