| Translated title of the contribution | Carrier dynamics and gain characteristics of 1.3µm GaInNAs quantum well lasers on GaAs substrate |
|---|---|
| Original language | English |
| Title of host publication | UK Semiconductors, Sheffield |
| Publication status | Published - Jul 2011 |
Carrier dynamics and gain characteristics of 1.3µm GaInNAs quantum well lasers on GaAs substrate
X Sun, N Vogiatzis, JM Rorison
Research output: Chapter in Book/Report/Conference proceeding › Conference Contribution (Conference Proceeding)