Carrier transport study in GaInNAs material using Monte-Carlo method

N Vogiatzis, YN Qiu, JM Rorison

Research output: Chapter in Book/Report/Conference proceedingConference Contribution (Conference Proceeding)

2 Citations (Scopus)

Abstract

We have used the stochastic Monte-Carlo method to determine the carrier transport studies in the bulk GaInNAs material. We have incorporated phonon and impurity scattering processes and explicitly considered the role of the nitrogen impurities as scattering centers. We show that in the expression of the relaxation times it is the perturbed rather than the free electron density of states that should be incorporated. This is derived from the Green's functions and the many impurity Anderson model and yields an enhanced scattering rate. The nitrogen impurities can also act as centers with an infinite scattering cross-section when their broadening becomes infinitely small. We show that the increase of the electron effective mass in GaInNAs system is more important than the non-parabolicity parameter in the decrease of mobility. Monte-Carlo calculations take into account the total scattering rate, which is significantly enhanced due to nitrogen scattering. The average electric field and the average energy are found to decrease with increasing N concentration and increase of the effective mass.
Translated title of the contributionCarrier transport study in GaInNAs material using Monte-Carlo method
Original languageEnglish
Title of host publicationSPIE - Semiconductor Lasers and Laser Dynamics III, Strasbourg, France
PublisherSociety of Photo-Optical Instrumentation Engineers (SPIE)
Volume6997
DOIs
Publication statusPublished - 7 Apr 2008

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