Channel temperature determination for GaN HEMT lifetime testing – Impact of package and device layout

Filip Gucmann*, James W. Pomeroy, Andrei Sarua, Martin Kuball

*Corresponding author for this work

Research output: Contribution to conferenceConference Paper

Abstract

Reliability testing of GaN High Electron Mobility Transistors critically relies on the determination of device channel temperature. If inaccurate, this has severe impact on the prediction of device lifetime. Here we use Raman thermography for accurate device temperature measurement, and show that the measured thermal resistance can differ significantly dependent on device layout, package, and test fixture used.

Original languageEnglish
Publication statusPublished - 2 May 2019
Event2019 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2019 - Minneapolis, United States
Duration: 29 Apr 20192 May 2019

Conference

Conference2019 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2019
CountryUnited States
CityMinneapolis
Period29/04/192/05/19

Keywords

  • Channel temperature
  • GaN-on-SiC
  • Lifetime testing
  • Manufacture
  • Raman thermography
  • Reliability

Fingerprint Dive into the research topics of 'Channel temperature determination for GaN HEMT lifetime testing – Impact of package and device layout'. Together they form a unique fingerprint.

Cite this