Abstract
Reliability testing of GaN High Electron Mobility Transistors critically relies on the determination of device channel temperature. If inaccurate, this has severe impact on the prediction of device lifetime. Here we use Raman thermography for accurate device temperature measurement, and show that the measured thermal resistance can differ significantly dependent on device layout, package, and test fixture used.
Original language | English |
---|---|
Publication status | Published - 2 May 2019 |
Event | 2019 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2019 - Minneapolis, United States Duration: 29 Apr 2019 → 2 May 2019 |
Conference
Conference | 2019 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2019 |
---|---|
Country/Territory | United States |
City | Minneapolis |
Period | 29/04/19 → 2/05/19 |
Keywords
- Channel temperature
- GaN-on-SiC
- Lifetime testing
- Manufacture
- Raman thermography
- Reliability