Channel Temperature Determination in High Power AlGaN/GaN HFETs using Electrical Methods and Raman Spectroscopy

RJ Simms, JW Pomeroy, MJ Uren, T Martin, M Kuball

Research output: Contribution to journal › Article (Academic Journal)

93 Citations (Scopus)

Original language	English
Pages (from-to)	478 - 482
Number of pages	5
Journal	IEEE Transactions on Electron Devices
Volume	55(2)
DOIs	https://doi.org/10.1109/TED.2007.913005
Publication status	Published - Feb 2008

Publisher: IEEE Electron Devices Society

Cite this

@article{2e8e6fc765634b23ba951c3893f5b6c7,

title = "Channel Temperature Determination in High Power AlGaN/GaN HFETs using Electrical Methods and Raman Spectroscopy",

author = "RJ Simms and JW Pomeroy and MJ Uren and T Martin and M Kuball",

note = "Publisher: IEEE Electron Devices Society",

year = "2008",

month = feb,

doi = "10.1109/TED.2007.913005",

language = "English",

volume = "55(2)",

pages = "478 -- 482",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

}

TY - JOUR

T1 - Channel Temperature Determination in High Power AlGaN/GaN HFETs using Electrical Methods and Raman Spectroscopy

AU - Simms, RJ

AU - Pomeroy, JW

AU - Uren, MJ

AU - Martin, T

AU - Kuball, M

N1 - Publisher: IEEE Electron Devices Society

PY - 2008/2

Y1 - 2008/2

U2 - 10.1109/TED.2007.913005

DO - 10.1109/TED.2007.913005

M3 - Article (Academic Journal)

VL - 55(2)

SP - 478

EP - 482

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

SN - 0018-9383

ER -