Characterisation of dislocations nanopipes and inversion domains in GaN by transmission electron microscopy

D Cherns, FA Ponce, WT Young

Research output: Contribution to journal › Article (Academic Journal) › peer-review

38 Citations (Scopus)

Translated title of the contribution	Characterisation of dislocations nanopipes and inversion domains in GaN by transmission electron microscopy
Original language	English
Pages (from-to)	76 - 81
Journal	E-MRS, Strasbourg, June 1997, Mat. Sci. and Engineering
Volume	B50
Publication status	Published - 1997

Handle.net

@article{96c661af2eef4ee78bf67fcb404a7fee,

title = "Characterisation of dislocations nanopipes and inversion domains in GaN by transmission electron microscopy",

author = "D Cherns and FA Ponce and WT Young",

year = "1997",

language = "English",

volume = "B50",

pages = "76 -- 81",

journal = "Materials Science Forum - Silicon Carbide and Related Materials 2005",

issn = "0255-5476",

publisher = "Trans Tech Publications Inc",

}

TY - JOUR

T1 - Characterisation of dislocations nanopipes and inversion domains in GaN by transmission electron microscopy

AU - Cherns, D

AU - Ponce, FA

AU - Young, WT

PY - 1997

Y1 - 1997

M3 - Article (Academic Journal)

VL - B50

SP - 76

EP - 81

JO - Materials Science Forum - Silicon Carbide and Related Materials 2005

JF - Materials Science Forum - Silicon Carbide and Related Materials 2005

SN - 0255-5476

ER -