This paper reports novel characteristic features of thermally-passivated Si nanoelectromechanical (NEM) beams fabricated via SOI-CMOS compatible processes with top-down hybrid EB/DUV lithography. Considerable difference of the resonance frequencies between the measurement results of the NEM beams with various lengths and the finite element simulation results suggests that effects of the undercut of the beam supports are serious for sub-micron beams. The resonance frequency of 332.57 MHz observed for an 800-nm-long beam is, to our knowledge, the highest ever as the fundamental resonance mode of lithographically-defined Si NEM beams. Clear change of the temperature dependence of the resonance frequencies with the varied beam lengths, observed for the first time, can be explained by considering effects of thermally-induced strain on the longer beams at higher temperatures.
|Title of host publication
|2018 IEEE Micro Electro Mechanical Systems, MEMS 2018
|Place of Publication
|Institute of Electrical and Electronics Engineers (IEEE)
|Number of pages
|Published - 24 Apr 2018
|31st IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2018 - Belfast, United Kingdom
Duration: 21 Jan 2018 → 25 Jan 2018
|Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)
|31st IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2018
|21/01/18 → 25/01/18
Bibliographical noteFunding Information:
This work has been partly supported by EU FP7 project NEMSIC (224525), TOBITATE! Young Ambassador Program, MEXT, Japan, and University of Southampton Summer Internship Program.
© 2018 IEEE.
Copyright 2018 Elsevier B.V., All rights reserved.
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