Abstract
This paper focuses on multi-tone characterization of baseband (IF) electrical memory effects and their reduction through the application of complex-signal, active baseband load-pull. This system has been implemented to allow the precise evaluation of intrinsic nonlinearity in high-power microwave devices for wideband applications. The developed active baseband load-pull capability allows a constant, frequency independent baseband load environment to be presented across wide modulation bandwidths, and this capability is important in allowing the effects of baseband impedance variation on the performance of nonlinear microwave devices, when driven by broadband multi-tone stimuli, to be fully understood. The experimental investigations were carried out using a 10 W GaN HEMT device, under 9-carrier complex modulated excitation. These confirmed that presenting a wideband baseband short circuit was essential for maximum ACPR suppression together with the minimization of ACPR asymmetry, confirming the importance of proper termination of baseband frequency components when designing DC bias networks.
Original language | English |
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Title of host publication | European Microwave Week 2012: "Space for Microwaves", EuMW 2012, Conference Proceedings - 7th European Microwave Integrated Circuits Conference, EuMIC 2012 |
Pages | 885-888 |
Number of pages | 4 |
Publication status | Published - 2012 |
Event | 7th European Microwave Integrated Circuits Conference, EuMIC 2012 - Held as Part of 15th European Microwave Week, EuMW 2012 - Amsterdam, Netherlands Duration: 29 Oct 2012 → 30 Oct 2012 |
Conference
Conference | 7th European Microwave Integrated Circuits Conference, EuMIC 2012 - Held as Part of 15th European Microwave Week, EuMW 2012 |
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Country/Territory | Netherlands |
City | Amsterdam |
Period | 29/10/12 → 30/10/12 |
Keywords
- Active load-pull
- adjacent channel power ratio
- baseband
- memory effects
- power amplifiers