Characterization of gate recessed GaN/AlGaN/GaN high electron mobility transistors fabricated using a SiCl4/SF6 dry etch recipe

R. T. Green, J. Luxmoore, K. B. Lee, P. A. Houston, F. Ranalli, T. Wang, P. J. Parbrook, MJ Uren, D. J. Wallis, T. Martin

Research output: Contribution to journalArticle (Academic Journal)peer-review

7 Citations (Scopus)

Abstract

Incorporating GaN capping layers in conjunction with recessing has been identified as a means to maximize the high frequency performance of AlGaN/GaN high electron mobility transistors (HEMTs). Doping the cap heavily n-type is required in order to ensure minimal loss of carriers from the channel. Using a SiCl4/SF6 dry etch plasma recipe, 250 nm gate length HEMTs with recess lengths varying from 300 nm to 5 mu m are fabricated. Heavily doped n(+)GaN caps enabled contact resistances of 0.3 Omega mm to be achieved. Recessing using a SiCl4/SF6 recipe does not introduce significant numbers of bulk traps. Gate recessing in conjunction with Si3N4 passivation reduces rf dispersion to negligible levels.
Translated title of the contributionCharacterization of gate recessed GaN/AlGaN/GaN high electron mobility transistors fabricated using a SiCl4/SF6 dry etch recipe
Original languageEnglish
Pages (from-to)013711
JournalJournal of Applied Physics
Volume108
DOIs
Publication statusPublished - Jul 2010

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