Characterization of gate recessed GaN/AlGaN/GaN high electron mobility transistors fabricated using a SiCl4/SF6 dry etch recipe

R. T. Green, J. Luxmoore, K. B. Lee, P. A. Houston, F. Ranalli, T. Wang, P. J. Parbrook, MJ Uren, D. J. Wallis, T. Martin

Research output: Contribution to journalArticle (Academic Journal)peer-review

7 Citations (Scopus)

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Physics & Astronomy