Projects per year
Abstract
Charge trapping and transport in the carbon doped GaN buffer of a GaN-based hetero-structure field effect transistor (HFET) has been investigated under both positive and negative substrate bias. Clear evidence of redistribution of charges in the carbon doped region by thermally generated holes is seen, with electron injection and capture observed during positive bias. Excellent agreement is found with simulations. It is shown that these effects are intrinsic to the carbon doped GaN and need to be controlled to provide reliable and efficient GaN-based power HFETs.
Original language | English |
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Article number | 215701 |
Number of pages | 4 |
Journal | Journal of Applied Physics |
Volume | 118 |
Issue number | 21 |
Early online date | 1 Dec 2015 |
DOIs | |
Publication status | Published - 7 Dec 2015 |
Research Groups and Themes
- CDTR
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Dive into the research topics of 'Charge movement in a GaN-based hetero-structure field effect transistor structure with carbon doped buffer under applied substrate bias'. Together they form a unique fingerprint.Projects
- 1 Finished
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GaN Electronics: RF Reliability and Degradation Mechanisms.
Kuball, M. H. H. (Principal Investigator)
1/02/14 → 31/07/17
Project: Research