Charge movement in a GaN-based hetero-structure field effect transistor structure with carbon doped buffer under applied substrate bias

Alexander Pooth, Michael J Uren, Markus Caesar, Trevor Martin, Martin H H Kuball

Research output: Contribution to journalArticle (Academic Journal)peer-review

25 Citations (Scopus)
317 Downloads (Pure)

Abstract

Charge trapping and transport in the carbon doped GaN buffer of a GaN-based hetero-structure field effect transistor (HFET) has been investigated under both positive and negative substrate bias. Clear evidence of redistribution of charges in the carbon doped region by thermally generated holes is seen, with electron injection and capture observed during positive bias. Excellent agreement is found with simulations. It is shown that these effects are intrinsic to the carbon doped GaN and need to be controlled to provide reliable and efficient GaN-based power HFETs.
Original languageEnglish
Article number215701
Number of pages4
JournalJournal of Applied Physics
Volume118
Issue number21
Early online date1 Dec 2015
DOIs
Publication statusPublished - 7 Dec 2015

Structured keywords

  • CDTR

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