Charge trapping and de-trapping in Si-nanoparticles embedded in silicon oxide films

A. Morales-Sánchez; J. Barreto; C. Domínguez; M. Aceves; Z. Yu; J. A. Luna

doi:10.1002/pssc.200780106

Charge trapping and de-trapping in Si-nanoparticles embedded in silicon oxide films

A. Morales-Sánchez^*, J. Barreto, C. Domínguez, M. Aceves, Z. Yu, J. A. Luna

^*Corresponding author for this work

Research output: Contribution to journal › Article (Academic Journal) › peer-review

5 Citations (Scopus)

Abstract

Electrical properties of silicon nanoparticles (Si-np's) embedded in a silicon oxide matrix were studied using MOS-like structures. Si-np's were created after silicon rich oxide (SRO) films were thermally annealed at 1100°C. Capacitance-voltage (C-V) characteristics showed downward and upward peaks in the accumulation region. Current-voltage (I-V) measurements exhibited current valleys and downward and upward peaks. Current versus time (I-t) measurements were also done at a negative constant gate voltage. A switching behaviour between two current states (ON and OFF) was observed. These effects have been related to the charge trapping and de-trapping of the Si-np's embedded in the SRO films.

Original language	English
Pages (from-to)	3651-3654
Number of pages	4
Journal	physica status solidi (c)
Volume	5
Issue number	12
DOIs	https://doi.org/10.1002/pssc.200780106
Publication status	Published - 2008

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Photonics and Quantum

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title = "Charge trapping and de-trapping in Si-nanoparticles embedded in silicon oxide films",

abstract = "Electrical properties of silicon nanoparticles (Si-np's) embedded in a silicon oxide matrix were studied using MOS-like structures. Si-np's were created after silicon rich oxide (SRO) films were thermally annealed at 1100°C. Capacitance-voltage (C-V) characteristics showed downward and upward peaks in the accumulation region. Current-voltage (I-V) measurements exhibited current valleys and downward and upward peaks. Current versus time (I-t) measurements were also done at a negative constant gate voltage. A switching behaviour between two current states (ON and OFF) was observed. These effects have been related to the charge trapping and de-trapping of the Si-np's embedded in the SRO films.",

author = "A. Morales-S{\'a}nchez and J. Barreto and C. Dom{\'i}nguez and M. Aceves and Z. Yu and Luna, {J. A.}",

year = "2008",

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TY - JOUR

T1 - Charge trapping and de-trapping in Si-nanoparticles embedded in silicon oxide films

AU - Morales-Sánchez, A.

AU - Barreto, J.

AU - Domínguez, C.

AU - Aceves, M.

AU - Yu, Z.

AU - Luna, J. A.

PY - 2008

Y1 - 2008

N2 - Electrical properties of silicon nanoparticles (Si-np's) embedded in a silicon oxide matrix were studied using MOS-like structures. Si-np's were created after silicon rich oxide (SRO) films were thermally annealed at 1100°C. Capacitance-voltage (C-V) characteristics showed downward and upward peaks in the accumulation region. Current-voltage (I-V) measurements exhibited current valleys and downward and upward peaks. Current versus time (I-t) measurements were also done at a negative constant gate voltage. A switching behaviour between two current states (ON and OFF) was observed. These effects have been related to the charge trapping and de-trapping of the Si-np's embedded in the SRO films.

AB - Electrical properties of silicon nanoparticles (Si-np's) embedded in a silicon oxide matrix were studied using MOS-like structures. Si-np's were created after silicon rich oxide (SRO) films were thermally annealed at 1100°C. Capacitance-voltage (C-V) characteristics showed downward and upward peaks in the accumulation region. Current-voltage (I-V) measurements exhibited current valleys and downward and upward peaks. Current versus time (I-t) measurements were also done at a negative constant gate voltage. A switching behaviour between two current states (ON and OFF) was observed. These effects have been related to the charge trapping and de-trapping of the Si-np's embedded in the SRO films.

UR - http://www.scopus.com/inward/record.url?scp=57349173959&partnerID=8YFLogxK

U2 - 10.1002/pssc.200780106

DO - 10.1002/pssc.200780106

M3 - Article (Academic Journal)

AN - SCOPUS:57349173959

SN - 1862-6351

VL - 5

SP - 3651

EP - 3654

JO - physica status solidi (c)

JF - physica status solidi (c)

IS - 12

ER -

Charge trapping and de-trapping in Si-nanoparticles embedded in silicon oxide films

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