Abstract
Biased conducting-up atomic force microscopy (AFM) has been shown to write and erase nanoscale metallic lines at the LaAlO3/SrTiO3 interface Using various AFM modes, we show the mechanism of conductivity switching is the writing of surface charge These charges are stably deposited on a wide range of LaAlO3 thicknesses, including bulk crystals. A strong asymmetry with writing polarity was found for 1 and 2 unit cells of LaAlO3, providing experimental evidence for a theoretically predicted built-in potential
Original language | English |
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Pages (from-to) | 2588-2591 |
Number of pages | 4 |
Journal | Nano Letters |
Volume | 10 |
Issue number | 7 |
DOIs | |
Publication status | Published - Jul 2010 |
Keywords
- Heterointerfaces
- complex oxides
- charge writing
- atomic force microscopy
- ELECTROSTATIC FORCE MICROSCOPY
- ROOM-TEMPERATURE
- HETEROSTRUCTURES
- STORAGE
- SRTIO3