Charge Writing at the LaAlO3/SrTiO3 Surface

Yanwu Xie, Christopher Bell, Takeaki Yajima, Yasuyuki Hikita, Harold Y. Hwang*, Chris Bell

*Corresponding author for this work

Research output: Contribution to journalArticle (Academic Journal)peer-review

97 Citations (Scopus)

Abstract

Biased conducting-up atomic force microscopy (AFM) has been shown to write and erase nanoscale metallic lines at the LaAlO3/SrTiO3 interface Using various AFM modes, we show the mechanism of conductivity switching is the writing of surface charge These charges are stably deposited on a wide range of LaAlO3 thicknesses, including bulk crystals. A strong asymmetry with writing polarity was found for 1 and 2 unit cells of LaAlO3, providing experimental evidence for a theoretically predicted built-in potential

Original languageEnglish
Pages (from-to)2588-2591
Number of pages4
JournalNano Letters
Volume10
Issue number7
DOIs
Publication statusPublished - Jul 2010

Keywords

  • Heterointerfaces
  • complex oxides
  • charge writing
  • atomic force microscopy
  • ELECTROSTATIC FORCE MICROSCOPY
  • ROOM-TEMPERATURE
  • HETEROSTRUCTURES
  • STORAGE
  • SRTIO3

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