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Charged native point defects in GaAs and other III-V compounds
DTJ Hurle
School of Physics
Research output
:
Contribution to journal
›
Article (Academic Journal)
›
peer-review
11
Citations (Scopus)
Overview
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Dive into the research topics of 'Charged native point defects in GaAs and other III-V compounds'. Together they form a unique fingerprint.
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Chemistry
Crystal Point Defect
100%
Doping Material
100%
Donor
75%
Melting Point
50%
Fermi Level
50%
melt
50%
Lattice Parameter
25%
Nonequilibrium
25%
Reaction Stoichiometry
25%
Schottky Contact
25%
Hole Concentration
25%
formation
25%
Lattice Constant
25%
Material Science
Gallium Arsenide
100%
Doping (Additives)
100%
Point Defect
100%
Density
25%
Lattice Constant
25%
Hole Concentration
25%
Annealing
25%
Schottky Barrier
25%
Arsenic
25%
Biochemistry, Genetics and Molecular Biology
Point Defect
100%
Melting Point
50%
Solution and Solubility
25%
Sphalerite
25%
Stoichiometry
25%
Zinc Sulfide
25%
Chemical Engineering
Growth Temperature
100%
Zinc Sulfide
100%