We report electron doping in the surface vicinity of KTaO3 by inducing oxygen vacancies via Ar+ irradiation. The doped electrons have high mobility (>10(4) cm(2)/V s) at low temperatures, and exhibit Shubnikov-de Haas oscillations with both two- and three-dimensional components. A disparity of the extracted in-plane effective mass, compared to the bulk values, suggests mixing of the orbital characters. Our observations demonstrate that Ar+ irradiation serves as a flexible tool to study low-dimensional quantum transport in 5d semiconducting oxides.
|Number of pages||7|
|Journal||Physical Review B: Condensed Matter and Materials Physics|
|Publication status||Published - 2 Aug 2013|