Abstract
We report electron doping in the surface vicinity of KTaO3 by inducing oxygen vacancies via Ar+ irradiation. The doped electrons have high mobility (>10(4) cm(2)/V s) at low temperatures, and exhibit Shubnikov-de Haas oscillations with both two- and three-dimensional components. A disparity of the extracted in-plane effective mass, compared to the bulk values, suggests mixing of the orbital characters. Our observations demonstrate that Ar+ irradiation serves as a flexible tool to study low-dimensional quantum transport in 5d semiconducting oxides.
| Original language | English |
|---|---|
| Article number | 085102 |
| Number of pages | 7 |
| Journal | Physical Review B: Condensed Matter and Materials Physics |
| Volume | 88 |
| Issue number | 8 |
| DOIs | |
| Publication status | Published - 2 Aug 2013 |
Keywords
- ELECTRON-GAS
- SRTIO3
- SUPERCONDUCTIVITY
- SURFACE
- FILMS
Fingerprint
Dive into the research topics of 'Coexistence of two-dimensional and three-dimensional Shubnikov-de Haas oscillations in Ar+-irradiated KTaO3'. Together they form a unique fingerprint.Cite this
- APA
- Author
- BIBTEX
- Harvard
- Standard
- RIS
- Vancouver