We predict spin Hall angles up to 80% for ultrathin noble metal films with substitutional Bi impurities. The colossal spin Hall effect is caused by enhancement of the spin Hall conductivity in reduced sample dimension and a strong reduction of the charge conductivity by resonant impurity scattering. These findings can be exploited to create materials with high efficiency of charge to spin current conversion by strain engineering.
|Pages (from-to)||1 - 4|
|Number of pages||4|
|Journal||Physical Review B: Condensed Matter and Materials Physics|
|Publication status||Published - 20 Nov 2014|
Bibliographical note4 pages, 5 figures