Abstract
We predict spin Hall angles up to 80% for ultrathin noble metal films with substitutional Bi impurities. The colossal spin Hall effect is caused by enhancement of the spin Hall conductivity in reduced sample dimension and a strong reduction of the charge conductivity by resonant impurity scattering. These findings can be exploited to create materials with high efficiency of charge to spin current conversion by strain engineering.
| Original language | Undefined/Unknown |
|---|---|
| Article number | 180406(R) |
| Pages (from-to) | 1 - 4 |
| Number of pages | 4 |
| Journal | Physical Review B: Condensed Matter and Materials Physics |
| Volume | 90 |
| Issue number | 18 |
| DOIs | |
| Publication status | Published - 20 Nov 2014 |
Bibliographical note
4 pages, 5 figuresKeywords
- cond-mat.mes-hall
- cond-mat.mtrl-sci
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HPC (High Performance Computing) and HTC (High Throughput Computing) Facilities
Alam, S. R. (Manager), Williams, D. A. G. (Manager), Eccleston, P. E. (Manager) & Greene, D. (Manager)
Facility/equipment: Facility
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