Column address selection in optical rams with positive and negative logic row access

C. Vagionas*, S. Markou, G. Dabos, T. Alexoudi, D. Tsiokos, A. Miliou, N. Pleros, G. T. Kanellos

*Corresponding author for this work

Research output: Contribution to journalArticle (Academic Journal)peer-review

14 Citations (Scopus)


An optical RAM row access gate followed by a column address selector for wavelength-division-multiplexing (WDM)-formatted words employing a single semiconductor optical amplifier-Mach-Zehnder interferometer (SOA-MZI) is presented. RAM row access is performed by the SOA-MZI that grants random access to a 4-bit WDM-formatted optical word employing multiwavelength cross-phase-modulation (XPM) phenomena, whereas column decoding is carried out in a completely passive way using arrayed waveguide grating. Proof-of-concept experimental verification for both positive and negative logic access is demonstrated for 4 \times 10 Gb/s optical words, showing error-free operation with only 0.4-dB-peak-power penalty and requiring a power value of 25 mW/Gb/s.

Original languageEnglish
Article number6655960
JournalIEEE Photonics Journal
Issue number6
Publication statusPublished - 29 Nov 2013


  • Mach-Zehnder interferometer
  • optical memory
  • optical signal processing
  • semiconductor optical amplifier (SOA)


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