Combined infrared and Raman temperature measurements on device structures

A Sarua, H Ji, M Kuball, MJ Uren, T Martin, KP Hilton, RS Balmer

Research output: Chapter in Book/Report/Conference proceedingConference Contribution (Conference Proceeding)

8 Citations (Scopus)

Abstract

Combined Infrared and micro-Raman techniques were applied to measure temperature rise in semiconductor device structures based on AlGaN/GaN HFETs. Results from both techniques were compared and temperature and spatial resolution issues were discussed. Finite-difference 3D modeling of temperature distributions was performed to aid the interpretation of the experimental data. In addition the versatility of the Raman method was demonstrated for a GaAs pHEMT device
Translated title of the contributionCombined infrared and Raman temperature measurements on device structures
Original languageEnglish
Title of host publicationThe International Conference on Compound Semiconductor Manufacturing Technology, Vancouver 2006
PublisherCS Mantech
Pages179 - 182
Number of pages4
Publication statusPublished - 2006

Bibliographical note

Conference Organiser: CS MANTECH

Structured keywords

  • CDTR

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