Abstract
Combined Infrared and micro-Raman techniques were applied to measure temperature rise in semiconductor device structures based on AlGaN/GaN HFETs. Results from both techniques were compared and temperature and spatial resolution issues were discussed. Finite-difference 3D modeling of temperature distributions was performed to aid the interpretation of the experimental data. In addition the versatility of the Raman method was demonstrated for a GaAs pHEMT device
Translated title of the contribution | Combined infrared and Raman temperature measurements on device structures |
---|---|
Original language | English |
Title of host publication | The International Conference on Compound Semiconductor Manufacturing Technology, Vancouver 2006 |
Publisher | CS Mantech |
Pages | 179 - 182 |
Number of pages | 4 |
Publication status | Published - 2006 |
Bibliographical note
Conference Organiser: CS MANTECHStructured keywords
- CDTR