Comparative study between silicon-rich oxide films obtained by LPCVD and PECVD

A. Morales*, J. Barreto, C. Domínguez, M. Riera, M. Aceves, J. Carrillo

*Corresponding author for this work

Research output: Contribution to journalArticle (Academic Journal)peer-review

39 Citations (Scopus)

Abstract

A comparative study of compositional and optical properties of silicon-rich oxide (SRO) films deposited by low-pressure chemical vapor deposition (LPCVD) and plasma-enhanced chemical vapor deposition (PECVD) is presented. Infrared spectra revealed the presence of hydrogen bonded to silicon atoms in the SRO-PECVD films, whereas in SRO-LPCVD films the IR spectra looked like the stoichiometric thermal silicon oxide. Moreover, X-ray photoelectron spectroscopy (XPS) studies showed that the SRO-PECVD films contain a higher content of nitrogen than SRO-LPCVD films. In spite of differences, the SRO films obtained by both methods show a strong room-temperature photoluminescence (PL). However, the highest PL intensity was emitted by SRO films obtained by LPCVD.

Original languageEnglish
Pages (from-to)54-58
Number of pages5
JournalPhysica E: Low-dimensional Systems and Nanostructures
Volume38
Issue number1-2
DOIs
Publication statusPublished - Apr 2007

Keywords

  • Infrared spectroscopy
  • Photoluminescence
  • Silicon rich oxide
  • XPS

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