A comparative study of compositional and optical properties of silicon-rich oxide (SRO) films deposited by low-pressure chemical vapor deposition (LPCVD) and plasma-enhanced chemical vapor deposition (PECVD) is presented. Infrared spectra revealed the presence of hydrogen bonded to silicon atoms in the SRO-PECVD films, whereas in SRO-LPCVD films the IR spectra looked like the stoichiometric thermal silicon oxide. Moreover, X-ray photoelectron spectroscopy (XPS) studies showed that the SRO-PECVD films contain a higher content of nitrogen than SRO-LPCVD films. In spite of differences, the SRO films obtained by both methods show a strong room-temperature photoluminescence (PL). However, the highest PL intensity was emitted by SRO films obtained by LPCVD.
|Number of pages||5|
|Journal||Physica E: Low-dimensional Systems and Nanostructures|
|Publication status||Published - Apr 2007|
- Infrared spectroscopy
- Silicon rich oxide