Comparative study between silicon-rich oxide films obtained by LPCVD and PECVD

A. Morales; J. Barreto; C. Domínguez; M. Riera; M. Aceves; J. Carrillo

doi:10.1016/j.physe.2006.12.056

Comparative study between silicon-rich oxide films obtained by LPCVD and PECVD

A. Morales^*, J. Barreto, C. Domínguez, M. Riera, M. Aceves, J. Carrillo

^*Corresponding author for this work

Research output: Contribution to journal › Article (Academic Journal) › peer-review

47 Citations (Scopus)

Abstract

A comparative study of compositional and optical properties of silicon-rich oxide (SRO) films deposited by low-pressure chemical vapor deposition (LPCVD) and plasma-enhanced chemical vapor deposition (PECVD) is presented. Infrared spectra revealed the presence of hydrogen bonded to silicon atoms in the SRO-PECVD films, whereas in SRO-LPCVD films the IR spectra looked like the stoichiometric thermal silicon oxide. Moreover, X-ray photoelectron spectroscopy (XPS) studies showed that the SRO-PECVD films contain a higher content of nitrogen than SRO-LPCVD films. In spite of differences, the SRO films obtained by both methods show a strong room-temperature photoluminescence (PL). However, the highest PL intensity was emitted by SRO films obtained by LPCVD.

Original language	English
Pages (from-to)	54-58
Number of pages	5
Journal	Physica E: Low-dimensional Systems and Nanostructures
Volume	38
Issue number	1-2
DOIs	https://doi.org/10.1016/j.physe.2006.12.056
Publication status	Published - Apr 2007

Research Groups and Themes

Photonics and Quantum

Keywords

Infrared spectroscopy
Photoluminescence
Silicon rich oxide
XPS

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title = "Comparative study between silicon-rich oxide films obtained by LPCVD and PECVD",

abstract = "A comparative study of compositional and optical properties of silicon-rich oxide (SRO) films deposited by low-pressure chemical vapor deposition (LPCVD) and plasma-enhanced chemical vapor deposition (PECVD) is presented. Infrared spectra revealed the presence of hydrogen bonded to silicon atoms in the SRO-PECVD films, whereas in SRO-LPCVD films the IR spectra looked like the stoichiometric thermal silicon oxide. Moreover, X-ray photoelectron spectroscopy (XPS) studies showed that the SRO-PECVD films contain a higher content of nitrogen than SRO-LPCVD films. In spite of differences, the SRO films obtained by both methods show a strong room-temperature photoluminescence (PL). However, the highest PL intensity was emitted by SRO films obtained by LPCVD.",

keywords = "Infrared spectroscopy, Photoluminescence, Silicon rich oxide, XPS",

author = "A. Morales and J. Barreto and C. Dom{\'i}nguez and M. Riera and M. Aceves and J. Carrillo",

year = "2007",

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doi = "10.1016/j.physe.2006.12.056",

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TY - JOUR

T1 - Comparative study between silicon-rich oxide films obtained by LPCVD and PECVD

AU - Morales, A.

AU - Barreto, J.

AU - Domínguez, C.

AU - Riera, M.

AU - Aceves, M.

AU - Carrillo, J.

PY - 2007/4

Y1 - 2007/4

N2 - A comparative study of compositional and optical properties of silicon-rich oxide (SRO) films deposited by low-pressure chemical vapor deposition (LPCVD) and plasma-enhanced chemical vapor deposition (PECVD) is presented. Infrared spectra revealed the presence of hydrogen bonded to silicon atoms in the SRO-PECVD films, whereas in SRO-LPCVD films the IR spectra looked like the stoichiometric thermal silicon oxide. Moreover, X-ray photoelectron spectroscopy (XPS) studies showed that the SRO-PECVD films contain a higher content of nitrogen than SRO-LPCVD films. In spite of differences, the SRO films obtained by both methods show a strong room-temperature photoluminescence (PL). However, the highest PL intensity was emitted by SRO films obtained by LPCVD.

AB - A comparative study of compositional and optical properties of silicon-rich oxide (SRO) films deposited by low-pressure chemical vapor deposition (LPCVD) and plasma-enhanced chemical vapor deposition (PECVD) is presented. Infrared spectra revealed the presence of hydrogen bonded to silicon atoms in the SRO-PECVD films, whereas in SRO-LPCVD films the IR spectra looked like the stoichiometric thermal silicon oxide. Moreover, X-ray photoelectron spectroscopy (XPS) studies showed that the SRO-PECVD films contain a higher content of nitrogen than SRO-LPCVD films. In spite of differences, the SRO films obtained by both methods show a strong room-temperature photoluminescence (PL). However, the highest PL intensity was emitted by SRO films obtained by LPCVD.

KW - Infrared spectroscopy

KW - Photoluminescence

KW - Silicon rich oxide

KW - XPS

UR - http://www.scopus.com/inward/record.url?scp=34147150176&partnerID=8YFLogxK

U2 - 10.1016/j.physe.2006.12.056

DO - 10.1016/j.physe.2006.12.056

M3 - Article (Academic Journal)

AN - SCOPUS:34147150176

SN - 1386-9477

VL - 38

SP - 54

EP - 58

JO - Physica E: Low-dimensional Systems and Nanostructures

JF - Physica E: Low-dimensional Systems and Nanostructures

IS - 1-2

ER -

Comparative study between silicon-rich oxide films obtained by LPCVD and PECVD

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