Abstract
A comparative study of compositional and optical properties of silicon-rich oxide (SRO) films deposited by low-pressure chemical vapor deposition (LPCVD) and plasma-enhanced chemical vapor deposition (PECVD) is presented. Infrared spectra revealed the presence of hydrogen bonded to silicon atoms in the SRO-PECVD films, whereas in SRO-LPCVD films the IR spectra looked like the stoichiometric thermal silicon oxide. Moreover, X-ray photoelectron spectroscopy (XPS) studies showed that the SRO-PECVD films contain a higher content of nitrogen than SRO-LPCVD films. In spite of differences, the SRO films obtained by both methods show a strong room-temperature photoluminescence (PL). However, the highest PL intensity was emitted by SRO films obtained by LPCVD.
| Original language | English |
|---|---|
| Pages (from-to) | 54-58 |
| Number of pages | 5 |
| Journal | Physica E: Low-Dimensional Systems and Nanostructures |
| Volume | 38 |
| Issue number | 1-2 |
| DOIs | |
| Publication status | Published - Apr 2007 |
Research Groups and Themes
- Photonics and Quantum
Keywords
- Infrared spectroscopy
- Photoluminescence
- Silicon rich oxide
- XPS
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