A SiCl4/SF6 dry etch plasma recipe is presented giving a selectivity of 14:1 between GaN and AlGaN. Using a leakage test structure, which enables bulk and surface leakage components to be identified independently, the optimized recipe is compared to an un-etched sample and devices recessed using a Cl2/Ar/O2-based plasma chemistry. Devices etched using the SiCl4/SF6 recipe demonstrated reduced bulk and surface leakage currents when operated over a wide range of temperatures. Consequently the SiCl4/SF6 recipe is identified as most suitable for the fabrication of gate recessed AlGaN/GaN HEMTs.
|Translated title of the contribution||Comparison of damage introduced into GaN/AlGaN/GaN heterostructures using selective dry etch recipes|
|Journal||Semiconductor Science and Technology|
|Publication status||Published - Jul 2009|