Comparison of damage introduced into GaN/AlGaN/GaN heterostructures using selective dry etch recipes

R. T. Green; J. Luxmoore; P. A. Houston; F. Ranalli; T. Wang; P. J. Parbrook; MJ Uren; D. J. Wallis; T. Martin

doi:10.1088/0268-1242/24/7/075020

Comparison of damage introduced into GaN/AlGaN/GaN heterostructures using selective dry etch recipes

R. T. Green, J. Luxmoore, P. A. Houston, F. Ranalli, T. Wang, P. J. Parbrook, MJ Uren, D. J. Wallis, T. Martin

School of Physics

Research output: Contribution to journal › Article (Academic Journal) › peer-review

5 Citations (Scopus)

Abstract

A SiCl4/SF6 dry etch plasma recipe is presented giving a selectivity of 14:1 between GaN and AlGaN. Using a leakage test structure, which enables bulk and surface leakage components to be identified independently, the optimized recipe is compared to an un-etched sample and devices recessed using a Cl2/Ar/O2-based plasma chemistry. Devices etched using the SiCl4/SF6 recipe demonstrated reduced bulk and surface leakage currents when operated over a wide range of temperatures. Consequently the SiCl4/SF6 recipe is identified as most suitable for the fabrication of gate recessed AlGaN/GaN HEMTs.

Translated title of the contribution	Comparison of damage introduced into GaN/AlGaN/GaN heterostructures using selective dry etch recipes
Original language	English
Pages (from-to)	075020
Journal	Semiconductor Science and Technology
Volume	24
DOIs	https://doi.org/10.1088/0268-1242/24/7/075020
Publication status	Published - Jul 2009

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@article{3a1e66040cc14471bf0928c0cd75d73e,

title = "Comparison of damage introduced into GaN/AlGaN/GaN heterostructures using selective dry etch recipes",

abstract = "A SiCl4/SF6 dry etch plasma recipe is presented giving a selectivity of 14:1 between GaN and AlGaN. Using a leakage test structure, which enables bulk and surface leakage components to be identified independently, the optimized recipe is compared to an un-etched sample and devices recessed using a Cl2/Ar/O2-based plasma chemistry. Devices etched using the SiCl4/SF6 recipe demonstrated reduced bulk and surface leakage currents when operated over a wide range of temperatures. Consequently the SiCl4/SF6 recipe is identified as most suitable for the fabrication of gate recessed AlGaN/GaN HEMTs.",

author = "Green, {R. T.} and J. Luxmoore and Houston, {P. A.} and F. Ranalli and T. Wang and Parbrook, {P. J.} and MJ Uren and Wallis, {D. J.} and T. Martin",

year = "2009",

month = jul,

doi = "10.1088/0268-1242/24/7/075020",

language = "English",

volume = "24",

pages = "075020",

journal = "Semiconductor Science and Technology",

issn = "0268-1242",

publisher = "IOP Publishing",

}

Comparison of damage introduced into GaN/AlGaN/GaN heterostructures using selective dry etch recipes. / Green, R. T.; Luxmoore, J.; Houston, P. A.; Ranalli, F.; Wang, T.; Parbrook, P. J.; Uren, MJ; Wallis, D. J.; Martin, T.

In: Semiconductor Science and Technology, Vol. 24, 07.2009, p. 075020.

Research output: Contribution to journal › Article (Academic Journal) › peer-review

TY - JOUR

T1 - Comparison of damage introduced into GaN/AlGaN/GaN heterostructures using selective dry etch recipes

AU - Green, R. T.

AU - Luxmoore, J.

AU - Houston, P. A.

AU - Ranalli, F.

AU - Wang, T.

AU - Parbrook, P. J.

AU - Uren, MJ

AU - Wallis, D. J.

AU - Martin, T.

PY - 2009/7

Y1 - 2009/7

N2 - A SiCl4/SF6 dry etch plasma recipe is presented giving a selectivity of 14:1 between GaN and AlGaN. Using a leakage test structure, which enables bulk and surface leakage components to be identified independently, the optimized recipe is compared to an un-etched sample and devices recessed using a Cl2/Ar/O2-based plasma chemistry. Devices etched using the SiCl4/SF6 recipe demonstrated reduced bulk and surface leakage currents when operated over a wide range of temperatures. Consequently the SiCl4/SF6 recipe is identified as most suitable for the fabrication of gate recessed AlGaN/GaN HEMTs.

AB - A SiCl4/SF6 dry etch plasma recipe is presented giving a selectivity of 14:1 between GaN and AlGaN. Using a leakage test structure, which enables bulk and surface leakage components to be identified independently, the optimized recipe is compared to an un-etched sample and devices recessed using a Cl2/Ar/O2-based plasma chemistry. Devices etched using the SiCl4/SF6 recipe demonstrated reduced bulk and surface leakage currents when operated over a wide range of temperatures. Consequently the SiCl4/SF6 recipe is identified as most suitable for the fabrication of gate recessed AlGaN/GaN HEMTs.

U2 - 10.1088/0268-1242/24/7/075020

DO - 10.1088/0268-1242/24/7/075020

M3 - Article (Academic Journal)

VL - 24

SP - 075020

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

SN - 0268-1242

ER -