Comparison of damage introduced into GaN/AlGaN/GaN heterostructures using selective dry etch recipes

R. T. Green, J. Luxmoore, P. A. Houston, F. Ranalli, T. Wang, P. J. Parbrook, MJ Uren, D. J. Wallis, T. Martin

Research output: Contribution to journalArticle (Academic Journal)peer-review

5 Citations (Scopus)

Abstract

A SiCl4/SF6 dry etch plasma recipe is presented giving a selectivity of 14:1 between GaN and AlGaN. Using a leakage test structure, which enables bulk and surface leakage components to be identified independently, the optimized recipe is compared to an un-etched sample and devices recessed using a Cl2/Ar/O2-based plasma chemistry. Devices etched using the SiCl4/SF6 recipe demonstrated reduced bulk and surface leakage currents when operated over a wide range of temperatures. Consequently the SiCl4/SF6 recipe is identified as most suitable for the fabrication of gate recessed AlGaN/GaN HEMTs.
Translated title of the contributionComparison of damage introduced into GaN/AlGaN/GaN heterostructures using selective dry etch recipes
Original languageEnglish
Pages (from-to)075020
JournalSemiconductor Science and Technology
Volume24
DOIs
Publication statusPublished - Jul 2009

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