Comparison of electrical and electro-optical characteristics of light-emitting capacitors based on silicon-rich Si-oxide fabricated by plasma-enhanced chemical vapor deposition and ion implantation

A. A. González-Fernández*, J. Juvert, Alfredo Morales-Sánchez, Jorge Barreto, M. Aceves-Mijares, C. Domínguez

*Corresponding author for this work

Research output: Contribution to journalArticle (Academic Journal)peer-review

11 Citations (Scopus)

Abstract

This work presents electrical and electro-optical studies performed on light-emitting capacitors with silicon-rich silicon oxide fabricated by plasma-enhanced chemical vapor deposition and by the implantation of Si ions in thermally grown SiO 2. The influence of the fabrication technique and silicon content on electrical, electro-optical, and emission spectra characteristics has been studied. Results on the electrical behavior show a significant dependence on both the fabrication technique and Si content that translates in variations on electroluminescence with fabrication technique and silicon excess.

Original languageEnglish
Article number053109
JournalJournal of Applied Physics
Volume111
Issue number5
DOIs
Publication statusPublished - 1 Mar 2012

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