TY - JOUR
T1 - Comparison of electrical and electro-optical characteristics of light-emitting capacitors based on silicon-rich Si-oxide fabricated by plasma-enhanced chemical vapor deposition and ion implantation
AU - González-Fernández, A. A.
AU - Juvert, J.
AU - Morales-Sánchez, Alfredo
AU - Barreto, Jorge
AU - Aceves-Mijares, M.
AU - Domínguez, C.
PY - 2012/3/1
Y1 - 2012/3/1
N2 - This work presents electrical and electro-optical studies performed on light-emitting capacitors with silicon-rich silicon oxide fabricated by plasma-enhanced chemical vapor deposition and by the implantation of Si ions in thermally grown SiO 2. The influence of the fabrication technique and silicon content on electrical, electro-optical, and emission spectra characteristics has been studied. Results on the electrical behavior show a significant dependence on both the fabrication technique and Si content that translates in variations on electroluminescence with fabrication technique and silicon excess.
AB - This work presents electrical and electro-optical studies performed on light-emitting capacitors with silicon-rich silicon oxide fabricated by plasma-enhanced chemical vapor deposition and by the implantation of Si ions in thermally grown SiO 2. The influence of the fabrication technique and silicon content on electrical, electro-optical, and emission spectra characteristics has been studied. Results on the electrical behavior show a significant dependence on both the fabrication technique and Si content that translates in variations on electroluminescence with fabrication technique and silicon excess.
UR - http://www.scopus.com/inward/record.url?scp=84858967013&partnerID=8YFLogxK
U2 - 10.1063/1.3692082
DO - 10.1063/1.3692082
M3 - Article (Academic Journal)
AN - SCOPUS:84858967013
VL - 111
JO - Journal of Applied Physics
JF - Journal of Applied Physics
SN - 0021-8979
IS - 5
M1 - 053109
ER -