Memristor based logic and memories are increasingly becoming one of the fundamental building blocks for future system design. Hence, it is important to explore various methodologies for implementing these blocks. In this paper, we present a novel Complementary Resistive Switching (CRS) based stateful logic operations using material implication. The proposed solution benefits from exponential reduction in sneak path current in crossbar implemented logic. We validated the effectiveness of our solution through SPICE simulations on a number of logic circuits. It has been shown that only 4 steps are required for implementing N input NAND gate whereas memristor based stateful logic needs N+1 steps.
|Title of host publication||Proceedings -Design, Automation and Test in Europe, DATE|
|Publisher||Institute of Electrical and Electronics Engineers (IEEE)|
|Publication status||Published - 1 Jan 2014|
|Event||17th Design, Automation and Test in Europe, DATE 2014 - Dresden, United Kingdom|
Duration: 24 Mar 2014 → 28 Mar 2014
|Conference||17th Design, Automation and Test in Europe, DATE 2014|
|Period||24/03/14 → 28/03/14|